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BFR183F

Description
NPN Silicon RF Transistor
CategoryDiscrete semiconductor    The transistor   
File Size49KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BFR183F Overview

NPN Silicon RF Transistor

BFR183F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.065 A
Collector-based maximum capacity0.54 pF
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.45 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)8000 MHz
Base Number Matches1
BFR183F
NPN Silicon RF Transistor*
For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
f
T
= 8 GHz,
F
= 0.9 dB at 900 MHz
* Short term description
3
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFR183F
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
62 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
1
T
S
Marking
RHs
Pin Configuration
1=B
2=E
3=C
Package
TSFP-3
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Value
12
20
20
2
65
5
450
150
-65 ... 150
-65 ... 150
Value
195
Unit
V
mA
mW
°C
Unit
K/W
is measured on the collector lead at the soldering point to the pcb
2For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2005-10-14
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