2N3819
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SILICON
N-CHANNEL JFET
The CENTRAL SEMICONDUCTOR 2N3819 is a silicon
N-Channel JFET designed for RF amplifier and mixer
applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS:
(TA=25°C)
Drain-Gate Voltage
Drain-Source Voltage
Gate-Source Voltage
Continuous Gate Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VDG
VDS
VGS
IG
PD
TJ, Tstg
UNITS
V
V
V
mA
mW
°C
25
25
25
10
360
-65 to +150
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IGSS
VGS=15V
IGSS
VGS=15V, TA=100°C
IDSS
BVGSS
VGS(OFF)
VGS
VDS=15V
IG=1.0μA
VDS=15V, ID=2.0nA
VDS=15V, ID=200μA
VDS=15V, VGS=0, f=1.0MHz
VDS=15V, VGS=0, f=100MHz
VDS=15V, VGS=0, f=1.0kHz
VDS=15V, VGS=0, f=1.0MHz
VDS=15V, VGS=0, f=1.0MHz
2.0
25
MAX
2.0
2.0
20
8.0
UNITS
nA
μA
mA
V
V
V
mS
mS
μS
pF
pF
0.5
2.0
1.6
7.5
6.5
50
8.0
4.0
|
Yfs
|
|
Yfs
|
|
Yos
|
Ciss
Crss
R1 (9-January 2014)
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nd
day air)
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REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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