BAV74LT1G
Monolithic Dual
Switching Diode
Features
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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ANODE
1
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
50
200
500
Unit
Vdc
mAdc
mAdc
3
CATHODE
2
ANODE
3
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1), T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
417
−55
to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
SOT−23
CASE 318
STYLE 9
R
qJA
P
D
MARKING DIAGRAM
R
qJA
T
J
, T
stg
JA M
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
JA = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
BAV74LT1G
BAV74LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000/Tape & Reel
10,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
August, 2009
−
Rev. 5
1
Publication Order Number:
BAV74LT1/D
BAV74LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 5.0
mAdc)
Reverse Voltage Leakage Current, (Note 3)
(V
R
= 50 Vdc, T
J
= 125°C)
(V
R
= 50 Vdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, measured at I
R
= 1.0 mA, R
L
= 100
W)
3. For each individual diode while the second diode is unbiased.
V
(BR)
I
R
50
−
Vdc
mAdc
Symbol
Min
Max
Unit
−
−
−
−
−
100
0.1
2.0
1.0
4.0
C
D
V
F
t
rr
pF
Vdc
ns
Curves Applicable to Each Anode
100
IF, FORWARD CURRENT (mA)
IR , REVERSE CURRENT (μA)
10
T
A
= 150°C
T
A
= 85°C
10
T
A
= - 40°C
1.0
T
A
= 125°C
T
A
= 85°C
0.1
T
A
= 55°C
0.01
T
A
= 25°C
1.0
T
A
= 25°C
0.1
0.2
0.4
0.6
0.8
1.0
V
F
, FORWARD VOLTAGE (VOLTS)
1.2
0.001
0
10
20
30
V
R
, REVERSE VOLTAGE (VOLTS)
40
50
Figure 1. Forward Voltage
Figure 2. Leakage Current
1.0
CD, DIODE CAPACITANCE (pF)
0.9
0.8
0.7
0.6
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
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2
BAV74LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU
−07
AND
−09
OBSOLETE, NEW
STANDARD 318−08.
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
D
SEE VIEW C
3
E
1
2
HE
c
e
b
q
0.25
A
A1
L
L1
VIEW C
DIM
A
A1
b
c
D
E
e
L
L1
H
E
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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USA/Canada
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For additional information, please contact your local
Sales Representative
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