DPG120C300QB
HiPerFRED²
V
RRM
I
FAV
t
rr
=
= 2x
=
300 V
60 A
35 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG120C300QB
Backside: cathode
1
2
3
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
TO-3P
●
Industry standard outline
compatible with TO-247
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a
© 2013 IXYS all rights reserved
DPG120C300QB
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.69
5.8
0.55
0.25
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 150 V f = 1 MHz
I
F
=
60 A; V
R
= 200 V
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= 125°C
-di
F
/dt = 200 A/µs
80
3.5
9
35
65
275
450
V
mΩ
K/W
K/W
W
A
pF
A
A
ns
ns
min.
typ.
max.
300
300
1
0.35
1.40
1.72
1.10
1.45
60
Unit
V
V
µA
mA
V
V
V
V
A
max. non-repetitive reverse blocking voltage
V
R
= 300 V
V
R
= 300 V
I
F
=
I
F
=
60 A
60 A
forward voltage drop
I
F
= 120 A
I
F
= 120 A
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
t
rr
average forward current
T
C
= 130°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
reverse recovery time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a
© 2013 IXYS all rights reserved
DPG120C300QB
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
mounting torque
mounting force with clip
TO-3P
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
1)
min.
-55
-55
-55
typ.
max.
70
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
5
0.8
20
1.2
120
Product Marking
Part number
D
P
G
120
C
300
QB
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-3P (3)
Logo
Part No.
Assembly Line
Assembly Code
Date Code
IXYS
Zyyww
abcd
Ordering
Standard
Part Number
DPG120C300QB
Marking on Product
DPG120C300QB
Delivery Mode
Tube
Quantity
30
Code No.
503821
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.69
3.2
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a
© 2013 IXYS all rights reserved
DPG120C300QB
Outlines TO-3P
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a
© 2013 IXYS all rights reserved
DPG120C300QB
Fast Diode
120
100
80
0.7
20
18
0.6
I
F
= 120 A
60 A
30 A
16
I
F
= 120 A
60 A
30 A
I
F
60
Q
rr
0.5
[μC]
0.4
40
20
T
VJ
= 150°C
0.3
25°C
0.2
100
T
VJ
= 125°C
V
R
= 200 V
1.6
2.0
200
300
400
500
I
RM
14
12
[A]
[A]
10
8
6
4
0
200
400
600
T
VJ
= 125°C
V
R
= 200 V
0.0
0.4
0.8
1.2
V
F
[V]
Fig. 1 Forward current
I
F
versus V
F
1.4
1.2
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
80
T
VJ
= 125°C
V
R
= 200 V
70
-di
F
/dt [A/μs]
Fig. 3 Typ. reverse recov. current
I
RM
versus -di
F
/dt
1000
t
fr
900
800
700
10
9
V
FR
8
7
6
5
4
3
2
600
T
VJ
= 125°C
V
R
= 200 V
I
F
= 60 A
1.0
t
rr
K
f
0.8
[ns]
0.6
0.4
0.2
0
I
RM
Q
rr
40
80
120
160
50
60
I
F
= 120 A
60 A
30 A
t
fr
600
[ns]
500
400
300
V
FR
[V]
40
0
200
400
600
200
0
200
400
T
VJ
[°C]
Fig. 4 Typ. dynamic parameters
Q
rr
, I
RM
versus T
VJ
16
I
F
= 120 A
12
60 A
30 A
1.0
-di
F
/dt [A/μs]
Fig. 5 Typ. reverse recov. time
t
rr
versus -di
F
/dt
-di
F
/dt [A/μs]
Fig. 6 Typ. forward recov. voltage
V
FR
& time t
fr
versus di
F
/dt
E
rec
8
Z
thJC
[K/W]
4
T
VJ
= 125°C
V
R
= 200 V
100
200
300
400
500
0.1
10
0
10
1
10
2
10
3
10
4
[μJ]
-di
F
/dt [A/μs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
IXYS reserves the right to change limits, conditions and dimensions.
t [ms]
Fig. 8 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a
© 2013 IXYS all rights reserved
京公网安备 11010802033920号
EEWORLD
