BC817-16/-25/-40
Taiwan Semiconductor
300mW, NPN Small Signal Transistor
FEATURES
●
●
●
●
Low power loss, high efficiency
Ideal for automated placement
High surge current capability
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
CBO
V
CEO
V
EBO
I
C
h
FE
Package
Configuration
VALUE
50
45
5
500
250-600
SOT-23
Single Dice
UNIT
V
V
V
mA
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
●
●
●
●
Case: SOT-23
Molding compound meets UL 94 V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Weight: 8mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Power dissipation
Collector-base voltage, emitter open
Collector-emitter voltage, base open
Emitter-base voltage, collector open
Collector current, dc
Junction temperature
Storage temperature
I
C
= 10 μA, I
E
= 0
I
C
= 10 mA, I
B
= 0
I
E
= 1 μA, I
C
= 0
P
D
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
SYMBOL
BC817- BC817- BC817-
16
6A
25
6B
300
50
45
5
500
-55 to +150
-55 to +150
40
6C
UNIT
mW
V
V
V
mA
°C
°C
1
Version:J1702
BC817-16/-25/-40
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Collector cutoff current, emitter
open
Emitter cutoff current, collector
open
CONDITIONS
V
CB
= 45 V, I
E
= 0
V
EB
= 4 V, I
C
= 0
BC817-16
DC current gain
V
CE
= 1 V,
I
C
= 100 mA
BC817-25
BC817-40
V
CE(sat)
V
BE(sat)
f
T
h
FE
SYMBOL
I
CBO
I
EBO
MIN
-
-
100
160
250
-
-
100
TYP
-
-
-
-
-
-
-
-
MAX
0.1
0.1
250
400
600
0.7
1.2
-
V
V
MHz
UNIT
µA
µA
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Transition frequency
I
C
= 500 mA, I
B
= 50 mA
I
C
= 500 mA, I
B
= 50 mA
V
CE
= 5 V , I
C
= 10 mA,
f= 100MHz
ORDERING INFORMATION
PART NO.
BC817-XX
(Note 1)
PACKING
CODE
RF
PACKING CODE
SUFFIX(*)
G
PACKAGE
SOT-23
PACKING
3K / 7" Reel
Notes:
1. "xx" is Device Code is"16" and "25" and "40"
*: optional available
EXAMPLE
EXAMPLE P/N
BC817-16 RFG
PART NO.
BC817-16
PACKING CODE
RF
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
2
Version:J1702
BC817-16/-25/-40
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Typical Pulsed Current Gain VS.
Collector Current
10
10.00
Fig. 2 Collector-Emitter Saturation Voltage VS.
Collector Current
1
I
C ,
Collector Current (mA)
V
CE
= 5 V
I
C
, Collector Current (A)
1.00
0.1
0.10
0.01
0.001
0
100
200
h
FE
300
400
500
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V
CE(sat) ,
Collector Emitter Voltage (V)
Fig.3 Base-Emitter Saturation Voltage
VS. Collector Current
1000
1
Fig.4 Base-Emitter On Voltage
VS. Collector Current
-I
C,
Collector Current (mA)
100
I
C
, Collector Current (A)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
10
0.01
1
V
BE
, Base-Emitter Voltage (V)
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
BE(sat)
, Base-Emitter on Voltage (V)
3
Version:J1702
BC817-16/-25/-40
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Collector-Base Capacitance VS.
Collector-Base Voltage
40
Collector-Base Capacitance (pF)
30
20
10
0
0
4
8
12
16
20
24
28
V
CB
, Collector-Base Voltage (V)
4
Version:J1702
Embedded System
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