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BLF2425M6LS180P11

Description
RF MOSFET Transistors 2.4-2.5GHz 65V 12dB
Categorysemiconductor    Discrete semiconductor   
File Size1MB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF2425M6LS180P11 Overview

RF MOSFET Transistors 2.4-2.5GHz 65V 12dB

BLF2425M6LS180P11 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
Id - Continuous Drain Current10 mA
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance100 mOhms
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-539B-5
PackagingReel
Factory Pack Quantity100
Vgs - Gate-Source Voltage13 V
BLF2425M6L180P;
BLF2425M6LS180P
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for various applications such as ISM and industrial
heating at frequencies from 2400 MHz to 2500 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
CW
f
(MHz)
2450
I
Dq
(mA)
10
V
DS
(V)
28
P
L(AV)
(W)
180
G
p
(dB)
13.3
D
(%)
53.5
1.2 Features and benefits
Easy power control
Integrated ESD protection
High efficiency
Excellent thermal stability
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as ISM and industrial heating.

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Description RF MOSFET Transistors 2.4-2.5GHz 65V 12dB RF MOSFET Transistors 2.4-2.5GHz 65V 12dB
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