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BC848BT116

Description
Bipolar Transistors - BJT NPN 30V 1MA
CategoryDiscrete semiconductor    The transistor   
File Size1MB,9 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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BC848BT116 Overview

Bipolar Transistors - BJT NPN 30V 1MA

BC848BT116 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time13 weeks
Maximum collector current (IC)0.1 A
Collector-based maximum capacity3 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.3 V
Base Number Matches1
BC848B
NPN General purpose transistor
Datasheet
l
Outline
Parameter
Value
 
SOT-23
 
 
 
V
CEO
I
C
30V
100mA
SST3
 
 
 
l
Features
l
Inner circuit
1)BV
CEO
minimum is 30V (I
C
=1mA)
2)Complements the BC858B
l
Application
AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER
l
Packaging specifications
Part No.
Package
SOT-23
(SST3)
Package
size
2924
Taping
code
T116
Basic
Reel size Tape width ordering
(mm)
(mm)
unit.(pcs)
180
8
3000
Marking
BC848B
G1K
                                                                                         
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© 2016 ROHM Co., Ltd. All rights reserved.
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