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BD677G

Description
Darlington Transistors 4A 60V Bipolar Power NPN
CategoryDiscrete semiconductor    The transistor   
File Size73KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BD677G Overview

Darlington Transistors 4A 60V Bipolar Power NPN

BD677G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-225AA
package instructionROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
Contacts3
Manufacturer packaging code77-09
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)4 A
Collector-emitter maximum voltage60 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-225AA
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
BD675G, BD675AG,
BD677G, BD677AG,
BD679G, BD679AG, BD681G
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, medium−power silicon NPN Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
http://onsemi.com
High DC Current Gain
Monolithic Construction
Complementary to BD676, 676A, 678, 678A, 680, 680A, 682
BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803
These Devices are Pb−Free and are RoHS Compliant*
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS, 40 WATTS
COLLECTOR 2, 4
BASE 3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
Collector−Base Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
45
60
80
100
V
CBO
45
60
80
100
V
EBO
I
C
I
B
P
D
40
0.32
T
J
, T
stg
– 55 to + 150
W
W/°C
°C
BD6xx/BD6xxA = Device Code
x = 75, 77, 79, 81
Y
= Year
WW
= Work Week
G
= Pb−Free Package
5.0
4.0
1.0
Vdc
Adc
Adc
YWW
BD6xxG
YWW
BD6xxAG
Vdc
TO−225
CASE 77−09
STYLE 1
1 2
3
Value
Unit
Vdc
EMITTER 1
MARKING DIAGRAMS
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
3.13
Unit
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 15
Publication Order Number:
BD675/D

BD677G Related Products

BD677G BD677AG BD675G
Description Darlington Transistors 4A 60V Bipolar Power NPN Darlington Transistors 4A 60V 40W NPN Darlington Transistors 4A 45V 40W NPN
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free
Maker ON Semiconductor ON Semiconductor -
Parts packaging code TO-225AA TO-225AA TO-225AA
package instruction ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
Contacts 3 3 3
Manufacturer packaging code 77-09 77-09 77-09
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Factory Lead Time 1 week 1 week 1 week
Maximum collector current (IC) 4 A 4 A 4 A
Collector-emitter maximum voltage 60 V 60 V 45 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 750 750 750
JEDEC-95 code TO-225AA TO-225AA TO-225AA
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 40 W 40 W 40 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 40
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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