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BSS223PW-H6327

Description
MOSFET P-Ch -20V -390mA SOT-323-3
Categorysemiconductor    Discrete semiconductor   
File Size134KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSS223PW-H6327 Overview

MOSFET P-Ch -20V -390mA SOT-323-3

BSS223PW-H6327 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 20 V
Id - Continuous Drain Current- 390 mA
Rds On - Drain-Source Resistance700 mOhms
Vgs th - Gate-Source Threshold Voltage- 1.2 V
Vgs - Gate-Source Voltage12 V
Qg - Gate Charge- 620 pC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation250 mW
Channel ModeEnhancement
QualificationAEC-Q100
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height1.1 mm
Length2.9 mm
Transistor Type1 P-Channel
Width1.3 mm
Forward Transconductance - Min350 mS
Fall Time3.2 ns
Rise Time5 ns
Factory Pack Quantity3000
Typical Turn-Off Delay Time5.1 ns
Typical Turn-On Delay Time3.8 ns
Unit Weight0.000176 oz
BSS 223PW
OptiMOS
-P Small-Signal-Transistor
Feature
P-Channel
Enhancement mode
Super Logic Level (2.5 V rated)
150°C operating temperature
Avalanche rated
dv/dt rated
2
Product Summary
V
DS
R
DS(on)
I
D
3
-20
1.2
-0.39
PG-SOT-323
V
A
Qualified according to AEC Q101
Halogen-free according to IEC61249-2-21
Type
1
VSO05561
Drain
pin 3
Package
Tape and Reel
Marking
Gate
pin1
Source
pin 2
BSS 223PW
PG-SOT-323
H6327:3000pcs/r.
X4s
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
A
-0.39
-0.31
Pulsed drain current
T
A
=25°C
I
D puls
-1.56
Avalanche energy, single pulse
I
D
=-0.39 A ,
V
DD
=-10V,
R
GS
=25Ω
E
AS
1.4
mJ
Reverse diode dv/dt
I
S
=-0.39A,
V
DS
=-16V, di/dt=200A/µs,
T
jmax
=150°C
dv/dt
-6
kV/µs
Gate source voltage
V
GS
±12
V
Power dissipation
T
A
=25°C
P
tot
0.25
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
ESD Class; JESD22-A114-HBM
Class 0
Rev 1.5
Page 1
2011-07-13

BSS223PW-H6327 Related Products

BSS223PW-H6327 BSS223PW-L6327 BSS223PWH6327XTSA1
Description MOSFET P-Ch -20V -390mA SOT-323-3 MOSFET P-Ch -20V 390mA SOT-323-3 MOSFET P-Ch -20V -390mA SOT-323-3
Configuration Single Single SINGLE WITH BUILT-IN DIODE
Product Attribute Attribute Value Attribute Value -
Manufacturer Infineon Infineon -
Product Category MOSFET MOSFET -
RoHS Details Details -
Technology Si Si -
Mounting Style SMD/SMT SMD/SMT -
Package / Case SOT-323-3 SOT-323-3 -
Number of Channels 1 Channel 1 Channel -
Transistor Polarity P-Channel P-Channel -
Vds - Drain-Source Breakdown Voltage - 20 V - 20 V -
Id - Continuous Drain Current - 390 mA - 390 mA -
Rds On - Drain-Source Resistance 700 mOhms 1200 mOhms -
Vgs - Gate-Source Voltage 12 V 12 V -
Minimum Operating Temperature - 55 C - 55 C -
Maximum Operating Temperature + 150 C + 150 C -
Pd - Power Dissipation 250 mW 250 mW -
Channel Mode Enhancement Enhancement -
Packaging Reel Reel -
Height 1.1 mm 0.9 mm -
Length 2.9 mm 2 mm -
Transistor Type 1 P-Channel 1 P-Channel -
Width 1.3 mm 1.25 mm -
Fall Time 3.2 ns 5 ns -
Rise Time 5 ns 5 ns -
Factory Pack Quantity 3000 3000 -
Typical Turn-Off Delay Time 5.1 ns 5.1 ns -
Typical Turn-On Delay Time 3.8 ns 3.8 ns -
Unit Weight 0.000176 oz 0.000176 oz -
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