DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR520T
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1999 Nov 02
2000 Apr 03
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT416 (SC-75) package.
APPLICATIONS
Wideband applications such as
satellite TV tuners, cellular phones,
cordless phones, pagers etc., with
signal frequencies up to 2 GHz.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CES
I
C
P
tot
h
FE
f
T
G
UM
F
Note
1. T
s
is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
2000 Apr 03
2
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 75
C;
note 1
R
BE
= 0
open collector
CONDITIONS
open emitter
65
MIN.
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
noise figure
up to T
s
= 75
C;
note 1
I
C
= 20 mA; V
CE
= 6 V; T
j
= 25
C
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
R
BE
= 0
CONDITIONS
open emitter
MIN.
60
TYP.
120
9
15
1.1
PINNING
PIN
1
2
3
base
emitter
collector
Marking code:
N2.
BFR520T
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package.
lfpage
3
DESCRIPTION
1
Top view
2
MBK090
Fig.1 SOT416.
MAX.
20
15
70
150
250
1.6
UNIT
V
V
mA
mW
GHz
dB
dB
MAX.
20
15
2.5
70
150
+150
150
V
V
V
UNIT
mA
mW
C
C
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
500
BFR520T
UNIT
K/W
CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
CONDITIONS
I
E
= 0; V
CE
= 6 V
I
C
= 20 mA; V
CE
= 6 V
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
E
= i
e
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
I
C
= 20 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
= 25
C
s
21
2
F
insertion power gain
noise figure
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
C
s
=
opt
; I
C
= 20 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
C
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 2 GHz; T
amb
= 25
C
P
L1
ITO
Notes
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero and
G
UM
s
21
-
=
10 log ------------------------------------------------------- dB
2
2
1
–
s
11
1
–
s
22
2
MIN.
60
13
TYP.
120
1
0.5
0.4
9
15
9
14
1.1
1.6
1.9
17
26
MAX.
50
250
1.6
2.1
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
output power at 1 dB gain
compression
third order intercept point
I
C
= 20 mA; V
CE
= 6 V; R
L
= 50
;
f = 900 MHz; T
amb
= 25
C
note 2
2. I
C
= 20 mA; V
CE
= 6 V; R
L
= 50
;
f = 900 MHz; T
amb
= 25
C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at
f
(2pq)
= 898 MHz and at f
(2qp)
= 904 MHz.
2000 Apr 03
3
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
200
Ptot
(mW)
150
MGU068
MRC028
handbook, halfpage
200
h FE
150
100
100
50
50
0
0
50
100
150
Ts (°C)
200
0
10
−2
10
−1
1
10
I C (mA)
10
2
V
CE
= 6 V; T
j
= 25
C.
Fig.3
Fig.2 Power derating curve.
DC current gain as a function of collector
current; typical values.
MRC021
MRC022
0.7
handbook, halfpage
C re
(pF)
0.6
0.5
handbook, halfpage
f
12
T
(GHz)
10
VCE = 8 V
8
0.4
6
0.3
4
0.2
0.1
0
0
2
4
6
8
10
VCB (V)
2
3V
0
1
10
I C (mA)
100
I
C
= 0; f = 1 MHz.
f = 1 GHz; T
amb
= 25
C.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
2000 Apr 03
4
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
handbook, halfpage
20
MRC027
G UM
(dB)
handbook, halfpage
25
gain
(dB)
20
MRC026
18
MSG
16
15
G max
G UM
VCE = 6 V
3V
14
10
12
5
10
0
10
20
I C (mA)
30
0
0
10
20
I C (mA)
30
V
CE
= 6 V; f = 900 MHz; T
amb
= 25
C.
G
UM
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
V
CE
= 6 V; f = 2 GHz; T
amb
= 25
C.
G
UM
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
Fig.6
Maximum unilateral power gain as a
function of collector current; typical values.
Fig.7
Gain as a function of collector current;
typical values.
handbook, halfpage
50
gain
(dB)
40
MRC024
MRC025
handbook, halfpage
50
G UM
gain
(dB)
40
G UM
30
MSG
20
G max
30
MSG
20
G max
10
10
0
10
−2
10
−1
1
f (GHz)
10
0
10
−2
10
−1
1
f (GHz)
10
I
C
= 5 mA; V
CE
= 6 V; T
amb
= 25
C.
G
UM
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
I
C
= 20 mA; V
CE
= 6 V; T
amb
= 25
C.
G
UM
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
Fig.8
Gain as a function of frequency;
typical values.
Fig.9
Gain as a function of frequency;
typical values.
2000 Apr 03
5
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