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BAT54AWT1

Description
Schottky Diodes & Rectifiers 30V 225mW Dual
CategoryDiscrete semiconductor    diode   
File Size51KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BAT54AWT1 Overview

Schottky Diodes & Rectifiers 30V 225mW Dual

BAT54AWT1 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeSC-70
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging code419-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.24 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.6 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
BAT54AW
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
www.onsemi.com
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mAdc
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current (DC)
Non−Repetitive Peak Forward Current
t
p
< 10 msec
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
F
200
1.6
I
F
I
FSM
600
I
FRM
300
T
J
T
stg
−55 to 150
−55 to +150
°C
°C
mA
200 Max
mW
mW/°C
mA
mA
Value
30
Unit
V
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
SOT−323
CASE 419
STYLE 4
CATHODE
1
2
CATHODE
ANODE
3
MARKING DIAGRAM
B7M
G
G
1
B7
M
G
= Device Code
= Date Code*
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device
BAT54AWT1G
SBAT54AWT1G
Package
SOT−323
(Pb−Free)
SOT−323
(Pb−Free)
Shipping
3,000/Tape & Reel
3,000/Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
October, 2015 − Rev. 5
Publication Order Number:
BAT54AWT1/D

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