3LN02N datasheet, PDF - EEWORLD Datasheet

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3LN02N: DescriptionSmall Signal Field-Effect Transistor, 0.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, NP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size30KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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3LN02N Overview

Small Signal Field-Effect Transistor, 0.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, NP, 3 PIN

3LN02N Parametric

Parameter Name	Attribute value
Objectid	1543853920
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	0.3 A
Maximum drain-source on-resistance	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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Ordering number : ENN6549

3LN02N

N-Channel Silicon MOSFET

3LN02N

Ultrahigh-Speed Switching Applications

Features

•

Package Dimensions

unit : mm

2178

5.0

4.0

Low ON resistance.

Ultrahigh-speed switching.

2.5V drive.

[3LN02N]

4.0

0.45

0.5

0.6

2.0

5.0

0.45

0.44

14.0

1 : Source

2 : Drain

3 : Gate

1.3

Specifications

Absolute Maximum Ratings

at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

IDP

Tch

Tstg

PW≤10µs, duty cycle≤1%

Conditions

1.3

SANYO : NP

Ratings

±10

0.3

1.2

0.4

150

--55 to +150

Unit

°C

Electrical Characteristics

at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Sourse Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)



yfs



Conditions

ID=1mA, VGS=0

VDS=30V, VGS=0

VGS=±8V, VDS=0

VDS=10V, ID=100µA

VDS=10V, ID=150mA

Ratings

min

±10

0.4

0.56

1.3

typ

max

Unit

µA

Marking : YD

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71000 TS IM TA-2952 No.6549-1/4

3LN02N

0.5

PD -- Ta

Allowable Power Dissipation, PD -- W

0.4

0.3

0.2

0.1

100

120

140

160

Ambient Temperature, Ta --

°C

IT01988

Note on usage : Since the 3LN02N is designed for high-speed switching applications, please avoid using

this device in the vicinity of highly charged objects.

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of July, 2000. Specifications and information herein are subject

to change without notice.

PS No.6549-4/4

3LN02N Related Products

	3LN02N	ENN6549
Description	Small Signal Field-Effect Transistor, 0.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, NP, 3 PIN	Ultrahigh-Speed Switching Applications

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