SIDC08D60C6
Fast switching diode chip in EMCON 3 -Technology
FEATURES:
•
600V EMCON 3 technology 70 µm chip
•
soft, fast switching
•
low reverse recovery charge
•
small temperature coefficient
A
This chip is used for:
•
power module
•
discrete components
Applications:
•
drives
C
Chip Type
SIDC08D60C6
V
R
600V
I
F
30A
Die Size
3.46 x 2.3 mm
2
Package
sawn on foil
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metallization
Cathode metallization
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
3.46 x 2.3
7.96 / 5.77
2.76 x 1.6
70
150
180
1818 pcs
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al,
≤500µm
∅
0.65mm; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
µm
mm
deg
mm
2
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4551M, Edition 1.1, 10.07.2006
SIDC08D60C6
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current limited by
T
jmax
Maximum repetitive forward current
limited by T
jmax
Operating junction and storage
temperature
1)
Symbol
V
RRM
I
F
I
FRM
T
j
,
T
s t g
Condition
Value
600
1)
Unit
V
A
60
-40...+175
°C
depending on thermal properties of assembly
Static Electrical Characteristics
(tested on chip),
T
j=25
°C,
unless otherwise specified
Parameter
Reverse leakage current
Cathode-Anode
breakdown Voltage
Forward voltage drop
Symbol
I
R
V
Br
V
F
Conditions
V
R
= 600V
I
R
= 0 . 2 5 mA
I
F
= 30 A
T
j
= 25
°
C
T
j
= 2 5 ° C
T
j
= 2 5
°
C
600
1.25
1.6
1.95
Value
min.
Typ.
max.
27
Unit
µA
V
V
Dynamic Electrical Characteristics
(verified by design/characterization), inductive load
Parameter
Peak reverse recovery
current
Symbol
I
F
=30A
Conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 150 °C
Value
min.
Typ.
44.0
49.0
50.0
1.20
2.20
2.50
0.32
0.55
0.65
2)
max.
Unit
I
RM
di/dt=2100A/
µs
V
R
=300V
V
GE
= - 1 5 V
I
F
=30A
A
Recovered charge
Q
r
di/dt=2100A/
µs
V
R
=300V
V
GE
= - 1 5 V
I
F
=30A
µC
Reverse recovery energy
E
rec
di/dt=2100A/
µs
V
R
=300V
V
GE
= - 1 5 V
mJ
2)
values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4551M, Edition 1.1, 10.07.2006
SIDC08D60C6
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
FS30R06XE3
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
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characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4551M, Edition 1.1, 10.07.2006
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