PROFET®
ITS 5215L
Smart High-Side Power Switch
for Industrial Applications
Two Channels: 2 x 90mΩ
Status Feedback
Product Summary
Operating Voltage
V
bb
Active channels
On-state Resistance
R
ON
Nominal load current
I
L(NOM)
Current limitation
I
L(SCr)
Operating Temperature
T
a
5.5...40V
one
two parallel
90mΩ
45mΩ
3.7A
7.4A
12A
12A
-30 … +85°C
Package
PG-DSO-12
General Description
•
•
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS
technology.
Providing embedded protective functions
Applications
•
•
•
•
µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads in industrial
applications
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
•
•
•
•
•
•
•
Very low standby current
CMOS compatible input
Improved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground
Protection Functions
•
•
•
•
•
•
•
•
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (including load dump) with external
resistor
Reverse battery protection with external resistor
Loss of ground and loss of V
bb
protection
Electrostatic discharge protection (ESD)
Block Diagram
Vbb
IN1
ST1
IN2
ST2
Logic
Channel 1
Channel 2
Load 1
Load 2
Diagnostic Function
•
•
•
Diagnostic feedback with open drain output
Open load detection in OFF-state
Feedback of thermal shutdown in ON-state
GND
Infineon Technologies AG
1
2006-Mar-27
PROFET®
ITS 5215L
Functional diagram
GND
internal
voltage supply
IN1
ST1
logic
gate
control
+
charge
pump
current limit
VBB
clamp for
inductive load
OUT1
ESD
temperature
sensor
Open load
detection
channel 1
reverse
battery
protection
IN2
ST2
control and protection circuit
equivalent to
channel 1
OUT2
Pin Definitions and Functions
Pin
1
2
4
3
5
6,12,
heat
slug
7,9,11
8
10
Symbol
GND
IN1
IN2
ST1
ST2
V
bb
Function
Ground
of chip
Input 1,2
activates channel 1,2 in case of logic
high signal
Diagnostic feedback 1 & 2
of channel 1,2
open drain, low on failure
Positive power supply voltage.
Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
Not Connected
Output 1,2
protected high-side power output
of channel 1 and 2. Design the wiring for the
max. short circuit current
Pin configuration
(top view)
GND
IN1
ST1
IN2
ST2
V
bb
1
•
2
3
4
5
6
V
bb
*
12
11
10
9
8
7
V
bb
NC
OUT1
NC
OUT2
NC
NC
OUT2
OUT1
* heat slug
Infineon Technologies AG
2
2006-Mar-27
PROFET®
ITS 5215L
Maximum Ratings
at
T
j
= 25°C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 5)
Supply voltage for full short circuit protection
T
j,start
= -40 ...+150°C
Load current (Short-circuit current, see page 6)
Load dump protection
1
)
V
LoadDump
=
V
A
+
V
s
,
V
A
= 13.5 V
R
I
2
)
= 2
Ω,
t
d
= 400 ms; IN = low or high,
each channel loaded with
R
L
= 13.5
Ω,
Junction temperature
Operating temperature range
Storage temperature range
Power dissipation (DC)
4)
T
a
= 25°C:
(all channels active)
T
a
= 85°C:
Maximal switchable inductance, single pulse
V
bb
= 12V,
T
j,start
= 150°C
4)
,
see diagrams on page 9
one channel:
I
L
= 3.5 A,
E
AS
= 178 mJ, 0
Ω
I
L
= 7.0 A,
E
AS
= 337 mJ, 0
Ω
two parallel channels:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
Symbol
V
bb
V
bb
I
L
V
Load dump3
)
T
j
T
a
T
stg
P
tot
Values
43
36
self-limited
60
+150
-30 ...+85
-40 … +105
3.1
1.6
Unit
V
V
A
V
°C
W
Z
L
V
ESD
21.3
10
1.0
4.0
8.0
-10 ... +16
±0.3
±5.0
±5.0
mH
kV
Input voltage (DC)
see internal circuit diagram page 8
Current through input pin (DC)
Pulsed current through input pin
5
)
Current through status pin (DC)
V
IN
I
IN
I
INp
I
ST
V
mA
1
)
2)
3)
4
)
5
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
R
I
= internal resistance of the load dump test pulse generator
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 13
only for testing
Infineon Technologies AG
3
2006-Mar-27
PROFET®
ITS 5215L
Thermal Characteristics
Parameter and Conditions
Thermal resistance
junction - Case
6)
junction – ambient
6)
@ 6 cm
2
cooling area
Symbol
each channel:
R
thjC
R
thja
one channel active:
all channels active:
Values
min
typ
max
--
--
--
--
--
--
45
40
5
--
--
--
Unit
K/W
Electrical Characteristics
Parameter and Conditions,
each of the four channels
at T
j
= -40...+150°C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT);
IL = 2 A
each channel,
T
j
= 25°C:
R
ON
T
j
= 150°C:
two parallel channels,
T
j
= 25°C:
see diagram, page 10
--
--
--
3.7
7.4
--
--
--
0.2
0.2
70
140
35
4.7
9.5
--
100
100
--
--
90
180
45
--
mΩ
Nominal load current
one channel active:
I
L(NOM)
two parallel channels active:
A
Device on PCB
6)
,
T
a
=
85°C,
T
j
≤
150°C
Vbb = 32 V,
V
IN = 0,
see diagram page 8
Turn-on time
8
)
Output current
while GND disconnected or pulled up
7
)
;
I
L(GNDhigh)
IN
IN
to 90%
V
OUT
:
t
on
to 10%
V
OUT
:
t
off
2
250
270
1.0
1.1
mA
µs
Turn-off time
R
L
= 12
Ω
Slew rate on
8
)
Slew rate off
8
)
10 to 30%
V
OUT
,
R
L
= 12
Ω:
dV/dt
on
70 to 40%
V
OUT
,
R
L
= 12
Ω:
-dV/dt
off
V/µs
V/µs
6
)
7
)
8
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 13
not subject to production test, specified by design
See timing diagram on page 11.
Infineon Technologies AG
4
2006-Mar-27
PROFET®
ITS 5215L
Parameter and Conditions,
each of the four channels
at T
j
= -40...+150°C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
5.5
--
--
41
--
--
--
--
--
--
--
47
4.5
--
--
1
40
4.5
4.5
10)
52
10
15
10
10)
5
Unit
Operating Parameters
Operating voltage
Undervoltage switch off
9
)
Overvoltage protection
11
)
I
bb
= 40 mA
Standby current
12
)
V
IN
= 0;
see diagram page 11
V
bb(on)
T
j
=-40°C...25°C
:
V
bb(u so)
T
j
=125°C:
V
bb(AZ)
V
V
V
µA
T
j
=-40°C...25°C
:
I
bb(off)
T
j
=150°C:
T
j
=125°C:
Off-State output current (included in
I
bb(off)
)
I
L(off)
V
IN
= 0; each channel
Operating current
13)
,
V
IN
= 5V,
one channel on:
I
GND
all channels on:
Protection Functions
14)
Current limit,
Vout = 0V
,
(see timing diagrams, page 11)
T
j
=-40°C:
I
L(lim)
T
j
=25°C:
T
j
=+150°C:
Repetitive short circuit current limit,
T
j
=
T
jt
each channel
I
L(SCr)
two channels
(see timing diagrams, page 11)
µA
mA
--
--
0.6
1.2
1.2
2.4
--
--
9
--
--
--
41
150
--
--
15
--
12
12
2
47
--
10
23
----
--
--
--
52
--
--
A
A
Initial short circuit shutdown time
Vout = 0V
T
j,start
=25°C:
t
off(SC)
V
ON(CL)
T
jt
∆
T
jt
ms
V
°C
K
(see timing diagrams on page 11)
Output clamp (inductive load switch off)
15)
at VON(CL) = Vbb - VOUT,
I
L= 40 mA
Thermal overload trip temperature
Thermal hysteresis
9)
10
)
11
)
12
)
13
)
14
)
15
)
is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)
not subject to production test, specified by design
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended). See also
V
ON(CL)
in table of protection functions and
circuit diagram on page 8.
Measured with load; for the whole device; all channels off
Add
I
ST
, if
I
ST
> 0
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
V
ON(CL)
Infineon Technologies AG
5
2006-Mar-27
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