Preliminary data
SPI10N10L
SPP10N10L,SPB10N10L
SIPMOS
Power-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
175°C operating temperature
Avalanche rated
dv/dt rated
P-TO262-3-1
P-TO263-3-2
Product Summary
V
DS
R
DS(on)
I
D
100
154
10.3
P-TO220-3-1
V
A
Type
SPP10N10L
SPB10N10L
SPI10N10L
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4163
Q67042-S4164
Q67042-S4162
Marking
10N10L
10N10L
10N10L
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C
=25°C
T
C
=100°C
Symbol
I
D
Value
10.3
8.1
Unit
A
Pulsed drain current
T
C
=25°C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j ,
T
stg
42.2
60
6
±20
50
-55... +175
55/175/56
mJ
kV/µs
V
W
°C
Avalanche energy, single pulse
Reverse diode dv/dt
Gate source voltage
Power dissipation
T
C
=25°C
I
S
=10.3A,
V
DS
=80V,
di/dt=200A/µs,
T
jmax
=175°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D
=10.3 A ,
V
DD
=25V,
R
GS
=25
Page 1
2002-04-30
m
Preliminary data
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
SPI10N10L
SPP10N10L,SPB10N10L
Symbol
min.
R
thJC
R
thJA
R
thJA
-
-
-
-
Values
typ.
-
-
-
-
max.
3
100
75
50
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
100
1.2
Values
typ.
-
1.6
max.
-
2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 21 µA
Zero gate voltage drain current
V
DS
=100V,
V
GS
=0V,
T
j
=25°C
V
DS
=100V,
V
GS
=0V,
T
j
=125°C
µA
0.01
1
1
169
124
1
100
100
210
154
nA
m
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
V
GS
=4.5V,
I
D
=8.1A
Drain-source on-state resistance
V
GS
=10V,
I
D
=8.1A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2002-04-30
Drain-source on-state resistance
Preliminary data
SPI10N10L
SPP10N10L,SPB10N10L
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
I
D
=8.1A
Symbol
Conditions
min.
Values
typ.
9.4
355
72
42
4.6
19.1
27.8
17.8
max.
-
444
90
63
6.9
28.7
41.7
26.7
Unit
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f=1MHz
V
DD
=50V,
V
GS
=10V,
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0V,
I
F
=10.3A
V
R
=50V,
I
F =
l
S
,
di
F
/dt=100A/µs
Q
gs
Q
gd
Q
g
V
DD
=80V,
I
D
=10.3A
V
DD
=80V,
I
D
=10.3A,
V
GS
=0 to 10V
V
(plateau)
V
DD
=80V,
I
D
=10.3A
I
S
T
C
=25°C
Page 3
I
D
=10.3A,
R
G
=13
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
4.7
-
-
-
-
-
-
-
S
pF
ns
-
-
-
-
1.1
7.3
17.7
3.8
1.4
11
22
-
nC
V
-
-
-
-
-
-
-
0.93
57
126
10.3
42.2
1.25
71
158
A
V
ns
nC
2002-04-30
Preliminary data
1 Power dissipation
P
tot
=
f
(T
C
)
55
SPP10N10L
SPI10N10L
SPP10N10L,SPB10N10L
2 Drain current
I
D
=
f
(T
C
)
parameter:
V
GS
10 V
12
SPP10N10L
W
45
40
A
10
9
8
P
tot
I
D
35
30
7
6
25
20
15
10
5
0
0
20
40
60
80
100 120 140 160
°C
190
5
4
3
2
1
0
0
20
40
60
80
100 120 140 160
°C
190
T
C
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25 °C
10
2
SPP10N10L
t
p = 4.8µs
4 Transient thermal impedance
Z
thJC
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
1
SPP10N10L
K/W
A
/
I
D
on
)
=
V
DS
10 µs
10
0
I
D
R
DS
(
10
1
Z
thJC
10
-1
100 µs
10
10
0
DC
1 ms
-2
10 ms
single pulse
10
-3
10
-1 0
10
10
1
10
2
V
10
3
10
-4 -7
10
10
-6
V
DS
Page 4
T
C
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
2002-04-30
Preliminary data
5 Typ. output characteristic
I
D
=
f
(V
DS
);
T
j
=25°C
parameter:
t
p
= 80 µs
25
5.5V
SPI10N10L
SPP10N10L,SPB10N10L
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
500
A
6V
7V
10V
5V
R
DS(on)
4.7V
4.5V
I
D
15
10
5
0
0
2
4
6
8
10
V
14
V
DS
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80 µs
16
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
g
fs
10
A
12
7
I
D
10
g
fs
8
6
4
2
2
1
0
0
0
0
1
2
3
V
5
V
GS
Page 5
400
350
300
250
200
150
100
50
0
0
4.5V
4.7V
5V
m
5.5V
6V
7V
10V
2.5
5
7.5
10 12.5 15 17.5 20
A
25
I
D
S
8
6
5
4
3
2
4
6
8
A
11
I
D
2002-04-30
DSP and ARM Processors
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