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Q67050-A4114

Description
IGBT Chip in NPT-technology
CategoryDiscrete semiconductor    The transistor   
File Size61KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

Q67050-A4114 Overview

IGBT Chip in NPT-technology

Q67050-A4114 Parametric

Parameter NameAttribute value
MakerInfineon
Reach Compliance Codecompli
SIGC25T120CS
IGBT Chip in NPT-technology
FEATURES:
1200V NPT technology
180µm chip
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
This chip is used for:
C
Applications:
drives, SMPS, resonant
applications
G
E
Chip Type
SIGC25T120CS
V
CE
1200V
I
Cn
15A
Die Size
5.71 x 4.53 mm
2
Package
sawn on foil
Ordering Code
Q67050-A4114
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
5.71 x 4.53
2 x (2.18 x 1.6)
1.09 x 0.68
25.9 / 18.7
180
150
270
555 pcs
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
µm
mm
2
mm
grd
Edited by INFINEON Technologies AI PS DD HV3, L 7141-S, Edition 2, 03.09.2003
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