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SIGC109T120R3

Description
IGBT3 Chip
CategoryDiscrete semiconductor    The transistor   
File Size78KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

SIGC109T120R3 Overview

IGBT3 Chip

SIGC109T120R3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeDIE
package instructionUNCASED CHIP, R-XUUC-N
Reach Compliance Codecompli
Factory Lead Time1 week
Maximum collector current (IC)100 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUUC-N
Number of components1
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)610 ns
Nominal on time (ton)330 ns
Base Number Matches1
SIGC109T120R3
IGBT Chip
FEATURES:
1200V Trench + Field Stop technology
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
3
This chip is used for:
power module
C
Applications:
drives
G
E
Chip Type
SIGC109T120R3
V
CE
I
Cn
Die Size
10.47 x 10.44 mm
2
Package
sawn on foil
Ordering Code
Q67050-
A4108-A001
1200V 100A
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
10.47 x 10.44
8x(2.114 x 4.391)
1.139 x 1.139
109.3 / 85.8
140
150
90
124 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
mm
µm
mm
grd
2
mm
Edited by INFINEON Technologies AI PS DD HV3, L7681A, Edition 2, 04.09.2003

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