MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF18085A/D
Designed for GSM and GSM EDGE base station applications with
frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier
amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and
WLL applications. Specified for GSM–GSM EDGE 1805 – 1880 MHz.
•
GSM and GSM EDGE Performance, Full Frequency Band
(1805–1880 MHz)
Power Gain – 15 dB (Typ) @ 85 Watts CW
Efficiency – 52% (Typ) @ 85 Watts CW
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
@ f = 1805 MHz
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MRF18085A
RF Power Field Effect Transistors MRF18085AR3
N–Channel Enhancement–Mode Lateral MOSFETs
MRF18085ALSR3
The RF MOSFET Line
GSM/GSM EDGE
1.8 – 1.88 GHz, 85 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF18085A, MRF18085AR3
CASE 465A–06, STYLE 1
NI–780S
MRF18085ALSR3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
–0.5, +15
273
1.56
–65 to +200
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.64
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Typical)
M3 (Typical)
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF18085A MRF18085AR3 MRF18085ALSR3
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
µAdc)
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 600 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Common–Source Amplifier Power Gain @ 85 W (2)
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 1805 – 1880 MHz)
Drain Efficiency @ 85 W (2)
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 1805 – 1880 MHz)
Input Return Loss @ 85 W (2)
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 1805 – 1880 MHz)
P
out
, 1 dB Compression Point
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 1805 – 1880 MHz)
Output Mismatch Stress @ P1dB
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 1805 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
G
ps
η
IRL
P1dB
Ψ
13.5
48
—
83
15
52
–12
90
—
—
–9
—
dB
%
dB
Watts
C
rss
—
3.6
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
2.5
—
—
—
3.9
0.15
6.0
4
4.5
—
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
10
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch
consistency.
MRF18085A MRF18085AR3 MRF18085ALSR3
2
MOTOROLA RF DEVICE DATA
V
GG
C7
+
C4
R1
R2
C5
C6
R3
Z1
Z3
C2
Z2
C1
Z4
Z5
Z6
DUT
Z7
Z8
Z9
Z10
C8
+
V
DD
C9
RF
INPUT
Z11
C10
C3
Z12
RF
OUTPUT
C1, C3, C6, C7
C2
C4
C5, C8
C9
C10
R1, R2
R3
Z1
Z2
Z3
10 pF Chip Capacitors, B Case, ATC
1.8 pF Chip Capacitor, B Case, ATC
10
mF,
35 V Tantalum Capacitor, AVX
1 nF Chip Capacitors, B Case, ATC
220
mF,
63 V Electrolytic Capacitor, Radial, Philips
0.3 pF Chip Capacitor, B Case, ATC
10 kW, 1/4 W Chip Resistors (1206)
1.0 kW, 1/4 W Chip Resistor (1206)
0.671″ x 0.087″ Microstrip
0.568″ x 0.087″ Microstrip
0.500″ x 0.098″ Microstrip Shorted Stub
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
PCB
Connectors
0.610″ x 00.118″ Microstrip
0.331″ x 1.153″ Microstrip
0.063″ x 1.153″ Microstrip
0.122″ x 0.925″ Microstrip
0.547″ x 0.925″ Microstrip
0.394″ x 0.177″ Microstrip
0.180″ x 0.087″ Microstrip
0.686″ x 0.087″ Microstrip
0.294″ x 0.087″ Microstrip
Taconic TLX8, 0.8 mm Thickness
“N” Type, Macom 3052–1648–10
Figure 1. 1.80 – 1.88 GHz Test Fixture Schematic
C9
C4
R1
C5 C6
R2
C2
C1
Strap
R3
CUT OUT AREA
C7
C8
C3
C10
MRF18085A
C–PP–02–01–2–Rev0
Figure 2. 1.80 – 1.88 GHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF18085A MRF18085AR3 MRF18085ALSR3
3
TYPICAL CHARACTERISTICS
17
16
G ps , POWER GAIN (dB)
15
14
13
12
11
10
0
1
10
100
1000
I
DQ
= 1000 mA
800 mA
600 mA
400 mA
V
DD
= 26 Vdc
f = 1840 MHz
T
C
= 25_C
G ps , POWER GAIN (dB)
17
16
15
14
13
12
11
10
9
8
0.1
I
DQ
= 800 mA
f = 1840 MHz
T
C
= 25_C
1
10
P
out
, OUTPUT POWER (WATTS)
32 V
28 V
24 V
V
DD
= 20 V
100
1000
P
out
, OUTPUT POWER (WATTS)
Figure 3. Power Gain versus Output Power
Figure 4. Power Gain versus Output Power
17
16
G ps , POWER GAIN (dB)
15
14
13
12
11
10
9
1
10
100
50_C
T
C
= 25_C
85_C
Pout , OUTPUT POWER (WATTS)
V
DD
= 26 Vdc
I
DQ
= 800 mA
f = 1840 MHz
120
100
80
60
40
20
0
1800
V
DD
= 26 Vdc
I
DQ
= 800 mA
T
C
= 25_C
P
in
= 8 W
4W
1W
0.5 W
1000
1820
1840
1860
1880
1900
P
out
, OUTPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 5. Power Gain versus Output Power
Figure 6. Output Power versus Frequency
17
16
G ps , POWER GAIN (dB)
15
14
13
12
11
10
1750
1800
1850
f, FREQUENCY (MHz)
IRL @ 30 W
IRL @ 80 W
G
ps
@ 30 W
G
ps
@ 80 W
0
-4
-8
-12
-16
-20
V
DD
= 26 Vdc
I
DQ
= 800 mA
T
C
= 25_C
1900
-24
16
IRL, INPUT RETURN LOSS (dB)
G ps , POWER GAIN (dB)
15
14
13
12
11
V
DD
= 26 Vdc
I
DQ
= 800 mA
f = 1840 MHz
T
C
= 25_C
G
ps
60
50
40
30
20
η
, DRAIN EFFICIENCY (%)
η
0.1
1
10
100
10
0
1000
-28
1950
10
P
out
, OUTPUT POWER (WATTS)
Figure 7. Power Gain versus Frequency
Figure 8. Power Gain and Efficiency versus
Output Power
MRF18085A MRF18085AR3 MRF18085ALSR3
4
MOTOROLA RF DEVICE DATA
Z
o
= 10
Ω
Z
source
f = 1710 MHz
f = 1710 MHz
f = 1990 MHz
Z
load
f = 1990 MHz
V
DD
= 26 V, I
DQ
= 800 mA, P
out
= 85 W CW
f
MHz
1710
1785
1805
1880
1930
1960
1990
Z
source
Ω
1.13 + j3.62
1.61 + j4.23
1.69 + j4.34
2.83 + j5.25
3.00 + j5.18
4.39 + j4.97
6.59 + j4.74
Z
load
Ω
1.79 + j2.88
1.82 + j3.15
1.90 + j2.66
2.09 + j2.77
2.01 + j2.44
2.01 + j2.57
1.79 + j2.37
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Input
Matching
Network
Device
Under Test
Z
source
Z
load
Figure 9. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF18085A MRF18085AR3 MRF18085ALSR3
5
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