1N4148/1N4448
Surface Mount Switching Diodes
Features:
*Silicon Epitaxial Planner Diode
*Fast Switching Diodes
*500 mW Power Dissipation
Mechanical Data:
*Case : DO-35 Glass Case
*Weight : Approx 0.13 gram
SMALL SIGNAL
SWITCHING DIODES
150 m AMPERES
100 VOLTS
DO-35
DO-35 Outline Dimensions
Unit:mm
C
D
A
B
A
A
DIM
DO-35
Min
26.0
Max
-
Min
-
B
Max
4.20
Min
-
C
Max
0.55
Min
-
D
Max
2.0
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WEITRON
1N4148/1N4448
Maximum Ratings
Characteristic
Non-Repetitive Peak Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
(1)
Non-Repetitive Peak Forward Surge Current
@t=1.0us
Power Dissipation
Thermal Resistance Junction to Ambient
Operating and Strorage Temperature Range
( TA=25 C Unless otherwise noted)
Symbol
V
RM
V
PWM
V
RWM
V
R
I
O
I
FSM
P
d
R
θ
JA
T J ,T S T G
1N4148/ 1N4448
100
75
150
2.0
500
300
-65 to +175
Unit
V
V
mA
A
mW
K/W
C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage
IR= 100 ua
Forward Voltage
IF=10 mA
1N4148
1N4448
IF=5 mA
IF=100 mA
Leakage C urrent
V
R
=20V
V
R
=75V
V
R
=75V, Tj=150 C
Junction Capacitance
Reverse Recovery Time
I
F
=10 mA, I
R
=1mA, V
R
=6V, R
L
=100
Ω
( TA=25 C Unless otherwise noted)
Symbol
V(BR)R
Min
100
Max
-
Unit
V
VF
0.62
1.0
0.72
1.0
25
5
50
4
4
V
IR
-
-
-
nA
Cj
Trr
PF
nS
Note: 1.Valid Provided that device Terminals are Kept at Ambient Temperature.
WEITRON
1N4148/1N4448
60
Ω
D.U.T.
V
R F
=2V
2nF
5K
Ω
V
O
nA
10
4
10
3
RECITIFICATION EFFICIENCY
MEASUREMENT CIRCUIT
10
2
10
V
R
=20V
1
0
100
200 C
FIG 1, LEAKAGE CURRENT VERSUS
JUNCTION TEMPERATURE
A
100
V =tp /T T =1/fp
I
FRM
10
n=0
0.1
tp
I
F R M
T
1
0.2
0.5
0.1
10
-4
10
-3
10
-2
10
-4
tp
10
-1
1
10S
FIG 2, ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
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WEITRON
1N4148/1N4448
mA
10
3
10
4
T
J
=25 C
f=1KHz
Ω
10
I
F
2
T
F
10
T
J
=100 C
T
J
=25 C
10
3
10
1
10
-1
10
-2
2
10
0
1
V
F
2V
1
10
-2
10
-1
1
10
I
F
10
2
mA
FIG 3, FORWARD CHARACTERISTICS
FIG 4, DYNAMIC FORWARD RESISTANCE
VERSUS FORWARD CURRENT
mW
1000
900
800
P
tot
700
600
500
400
300
200
100
0
0
100
T
A
200 C
1.1
T
J
=25 C
f=1MHz
C
tot
(VR)
C
tot
(DV)
1.0
0.9
0.8
0.7
0
2
4
6
8
V
R
1 0 V
FIG 5, ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
FIG 6, RELATIVE CAPACITANCE VERSUS
VOLTAGE
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