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BC372PSTZ

Description
Darlington Transistors
Categorysemiconductor    Discrete semiconductor   
File Size21KB,1 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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Darlington Transistors

BC372PSTZ Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerDiodes
Product CategoryDarlington Transistors
RoHSN
ConfigurationSingle
Transistor PolarityNPN
Collector- Emitter Voltage VCEO Max100 V
Emitter- Base Voltage VEBO12 V
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
Pd - Power Dissipation1000 mW
Mounting StyleThrough Hole
Package / CaseTO-92
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max10000 at 100 mA at 5 V
Height4.01 mm
Length4.77 mm
Width2.41 mm
Gain Bandwidth Product fT100 MHz
NumOfPackaging1
Unit Weight0.016000 oz
NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 2 – SEPT 93
FEATURES
* 100 Volt V
CEO
* Gain of 8k at I
C
=250mA
* I
C
=1 Amp
BC372
E
B
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
VALUE
100
100
12
1
625
-55 to +150
TO92
UNIT
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
MIN.
100
100
12
100
100
1.0
2
10K
8K
100
25
3-16
MHz
pF
TYP.
MAX.
UNIT
V
V
V
nA
nA
V
V
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=100
µ
A, I
B
=0*
I
E
=10
µ
A, I
C
=0
V
CB
=80V, I
E
=0
V
EB
=10V, I
C
=0
I
C
=250mA, I
B
=0.25mA
I
C
=250mA, I
B
=0.25mA
I
C
=100mA, V
CE
=5V*
I
C
=250mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V
f=100MHz
V
CB
=10V, f=1MHz
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
V
BE(sat)
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
C
obo

BC372PSTZ Related Products

BC372PSTZ
Description Darlington Transistors
Product Attribute Attribute Value
Manufacturer Diodes
Product Category Darlington Transistors
RoHS N
Configuration Single
Transistor Polarity NPN
Collector- Emitter Voltage VCEO Max 100 V
Emitter- Base Voltage VEBO 12 V
Collector- Base Voltage VCBO 100 V
Maximum DC Collector Current 1 A
Pd - Power Dissipation 1000 mW
Mounting Style Through Hole
Package / Case TO-92
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
DC Current Gain hFE Max 10000 at 100 mA at 5 V
Height 4.01 mm
Length 4.77 mm
Width 2.41 mm
Gain Bandwidth Product fT 100 MHz
NumOfPackaging 1
Unit Weight 0.016000 oz
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