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TSD4M150V

Description
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE
CategoryDiscrete semiconductor    The transistor   
File Size356KB,8 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

TSD4M150V Overview

N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE

TSD4M150V Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
package instruction,
Reach Compliance Codecompli
Maximum drain current (Abs) (ID)135 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation(Abs)500 W

TSD4M150V Related Products

TSD4M150V TSD4M150 TSD4M150F
Description N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE
Maker STMicroelectronics - STMicroelectronics
Reach Compliance Code compli - compli
Maximum drain current (Abs) (ID) 135 A - 135 A
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
Number of components 1 - 1
Maximum operating temperature 150 °C - 150 °C
Maximum power dissipation(Abs) 500 W - 500 W
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