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BAS20

Description
0.2 A, 150 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size196KB,3 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
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BAS20 Overview

0.2 A, 150 V, SILICON, SIGNAL DIODE

BAS20 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWeitron Technology
package instructionR-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Maximum non-repetitive peak forward current2.5 A
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

BAS20 Preview

BAS19/BAS20
BAS21
Surface Mount Switching Diode
Features:
*Fast Switching Speed
*Surface Mount Package Ideally Suited for
Automatic Insertion
*High Conductance
*For General Purpose Switching Applications
Mechanical Data:
*Case: SOT-23 Molded Plastic
*Terminals: Solderable Per MIL-STD-202, Method 208
*Polarity: See Eqivalent Circuit Diagram
*Weight: 0.008grams(approx)
SWITCHING DIODE
200mAMPERS
120-250VOLTS
3
1
2
SOT-23
SOT-23 Outline Dimensions
A
Unit:mm
TOP VIEW
B
C
E
G
H
D
K
L
J
M
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
WEITRON
BAS19/BAS20
BAS21
Maximum Ratings
Characteristic
Non-Repetitive
Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
(1)
Average Rectified Output Current
(1)
Non-Repetitive
Peak Forward Surge Current
@t=1.0us
@t=1.0s
Power Dissipation
Thermal Resistance Junction to
Ambient Air
(1)
Operating and Storage
Temperature Range
WE IT R ON
Symbol
BAS19
120
100
(TA=25 C Unless otherwise noted)
BAS20
200
150
400
200
BAS21
250
200
Unit
Volts
Volts
mA
mA
V
RM
V
RRM
V
RWM
V
R
IFM
Io
IFSM
2.5
0.5
250
500
A
mW
K/W
C
Pd
R
θ
JA
T j ,T
STG
-65 to +150
Electrical Characteristics
Characteristic
Forward Voltage
IF =100mA
IF =200mA
(TA=25 C Unless otherwise noted)
Symbol
VF
IR
Cj
Min
-
-
-
Max
1.0
1.25
Unit
Volts
nAdc
PF
nS
Reverse Leakage
@Rated DC Blocking Voltage
Total Capacitance
(VR=1.0V, f=1.0MHz)
Reverse Recovery Time
IF=IR =30mA
Irr=0.1*IR ,RL=100
100
5.0
trr
50
NOTE:
1. Valid provided that terminals are kept at ambient temperature.
WEITRON
BAS19/BAS20
BAS21
Device Marking
Item
BAS19
BAS20
BAS21
Marking
JP
JR
JS
JS
3
1
Eqivalent Circuit diagram
(mA)
1000
T
j
= 25
°
C
100
I
F
, INST ANT ANEOUS FOR WARD CURRENT
(
u
A)
CURRENT
100
10
10
1
I
R
, LEAKAGE
0
1
2
1.0
0.1
0.1
0.01
V
F
, INST ANT ANEOUS FOR WARD VOL TAGE (V)
Fi g. 1 Forward Characteristics
0.01
0
100
200
T
j
, JUNCTION TEMPERA TURE (
°
C )
Fig. 2 Leakage Current vs Junction Temperature
WEITRON
http://www.weitron.com.tw

BAS20 Related Products

BAS20 BAS19 BAS21
Description 0.2 A, 150 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE SIGNAL DIODE
Is it Rohs certified? incompatible incompatible incompatible
Maker Weitron Technology Weitron Technology Weitron Technology
Reach Compliance Code unknow unknown unknow
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V
JESD-609 code e0 e0 e0
Maximum non-repetitive peak forward current 2.5 A 2.5 A 2.5 A
Number of components 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 0.2 A 0.2 A 0.2 A
Maximum repetitive peak reverse voltage 200 V 100 V 250 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
package instruction R-PDSO-G3 - R-PDSO-G3
Diode component materials SILICON - SILICON
JESD-30 code R-PDSO-G3 - R-PDSO-G3
Number of terminals 3 - 3
Minimum operating temperature -55 °C - -55 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Maximum power dissipation 0.2 W - 0.225 W
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED

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