1N957B THRU 1N992B
SILICON ZENER DIODE
6.8 VOLTS THRU 200 VOLTS
500mW, 5% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N957B Series
Silicon Zener Diode is a high quality voltage regulator
designed for use in industrial, commercial, entertainment
and computer applications.
DO-35 CASE
MAXIMUM RATINGS:
(TL=75°C)
Power Dissipation
Operating and Storage Junction Temperature
VZ Tolerance: Part number with “B” suffix
VZ Tolerance: Part number with “C” suffix
VZ Tolerance: Part number with “D” suffix
SYMBOL
PD
TJ, Tstg
500
-65 to +200
±5
±2
±1
UNITS
mW
°C
%
%
%
ELECTRICAL CHARACTERISTICS:
(TA=25°C) VF=1.5V MAX @ IF=200mA (for all types)
ZENER
VOLTAGE
TYPE
MIN
V
1N957B
1N958B
1N959B
1N960B
1N961B
1N962B
1N963B
1N964B
1N965B
1N966B
1N967B
1N968B
1N969B
1N970B
1N971B
1N972B
1N973B
1N974B
1N975B
1N976B
1N977B
1N978B
1N979B
1N980B
1N981B
1N982B
6.460
7.125
7.790
8.645
9.500
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
VZ @ IZT
NOM
V
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
MAX
V
7.140
7.875
8.610
9.555
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
65.10
71.40
78.75
TEST
CURRENT
IZT
mA
18.5
16.5
15.0
14.0
12.5
11.5
10.5
9.5
8.5
7.8
7.0
6.2
5.6
5.2
4.6
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.0
1.8
1.7
MAXIMUM ZENER
IMPEDANCE
ZZT @ IZT
Ω
4.5
5.5
6.5
7.5
8.5
9.5
11.5
13.0
16.0
17.0
21.0
25.0
29.0
33.0
41.0
49.0
58.0
70.0
80.0
93.0
105
125
150
185
230
270
ZZK @ IZK
Ω
mA
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
2000
2000
2000
2000
2000
1.00
0.50
0.50
0.50
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
MAXIMUM
REVERSE
CURRENT
IR
μA
150
75
50
25
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
@ VR
V
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
MAXIMUM
ZENER
CURRENT
IZM
mA
47
42
38
35
32
28
26
24
21
19
17
15
14
13
11
10
9.2
8.5
7.8
7.0
6.4
5.9
5.4
4.9
4.5
4.0
R1 (27-October 2011)
1N957B THRU 1N992B
SILICON ZENER DIODE
6.8 VOLTS THRU 200 VOLTS
500mW, 5% TOLERANCE
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C) VF=1.5V MAX @ IF=200mA (for all types)
ZENER
VOLTAGE
TYPE
MIN
V
1N983B
1N984B
1N985B
1N986B
1N987B
1N988B
1N989B
1N990B
1N991B
1N992B
77.90
86.45
95.00
104.5
114.0
123.5
142.5
152.0
171.0
190.0
VZ @ IZT
NOM
V
82
91
100
110
120
130
150
160
180
200
MAX
V
86.10
95.55
105.0
115.5
126.0
136.5
157.5
168.0
189.0
210.0
TEST
CURRENT
IZT
mA
1.5
1.4
1.3
1.1
1.0
0.95
0.85
0.80
0.68
0.65
MAXIMUM ZENER
IMPEDANCE
ZZT @ IZT
Ω
330
400
500
750
900
1100
1500
1700
2200
2500
ZZK @ IZK
Ω
mA
3000
3000
3000
4000
4500
5000
6000
6500
7100
8000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
MAXIMUM
REVERSE
CURRENT
IR
μA
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
@ VR
V
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
MAXIMUM
ZENER
CURRENT
IZM
mA
3.7
3.3
3.0
2.7
2.5
2.3
2.0
1.9
1.7
1.5
DO-35 CASE - MECHANICAL OUTLINE
R1 (27-October 2011)
w w w. c e n t r a l s e m i . c o m
ARM Technology
京公网安备 11010802033920号
EEWORLD
