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DF01S

Description
BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size256KB,3 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
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DF01S Overview

BRIDGE RECTIFIER DIODE

DF01S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWeitron Technology
package instructionR-PDSO-G4
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage100 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage100 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL

DF01S Preview

DF005S thru DF10S
Surface Mount Glass Passivated
Bridge Rectifiers
Features:
*For Surface Mount Application
*Glass Passivated Chip
*Low Reverse Leakage Current
*Low Forward Voltage Drop And High Current Capability
*Plastic Meterial Has UL Flammability Classification 94V-0
REVERSE VOLTAGE
50 TO 1000 VOLTS
FORWARD CURRENT
1.0 AMPERE
Mechanical Data
*Case : Molded Plastic
*Polarity :As marked on Body
*Weight : 0.02 Ounce ,0.38 grams
DF-S
DF-S Outline Dimensions
G
DF -S
Dim
A
B
C
D
E
G
H
J
K
L
Min
7.40
6.20
0.009
0.076
-
1.02
8.13
2.40
5.00
1.00
Max
7.90
6.50
0.25
0.33
10.40
1.53
8.51
3.40
5.20
1.20
+
A B
D E
~
L
H
J
K
~
C
WEITRON
DF005S thru DF10S
Maximum Ratings and Electrical Characteristics
Rating 25 C Ambient Temperature Unless Otherwise Specified.
Single Phase Half Wave, 60Hz , Resistive or Inductive Load.
For Capacitive Load, Derate Current by 20%.
Characteristics
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current @TC=40 C
Peak Forward Surge Current,
8.3 ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
Maximum Instantaneous At 1.0A DC
Maximum DC Reverse Current @Tj=25 C
At Rated DC Blocking Voltage @Tj=125 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Symbol
DF005S DF01S
VRRM 50
VRMS
VDC
IF(AV)
35
50
100
70
100
DF02S DF04S DF06S DF08S DF10S
Unit
200 400
140 280
200 400
600
420
600
800 1000
560
700
800 1000
V
V
V
A
1.0
IFSM
VF
IR
CJ
R
q
JA
TJ
TSTG
50
1.10
1.0
500
25
40
-55 to+150
-55 to+150
A
V
uA
PF
C/W
C
C
NOTES: 1.Measured at 1.0MHz applied reverse voltage of 4.0V DC.
2.Thermal Resistance from junction to ambient mounted on P.C.B. with 13*13mm Copper pads.
WEITRON
http://www.weitron.com.tw
DF005S thru DF10S
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
1.0
0.8
0.6
0.4
0.2
PEAK FORWARD S URGE CURRENT,
AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
50
40
30
20
10
0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.1
Single Half-Sine-Wave
(JEDEC METHOD)
20
40
60
80
100
120
140
1
2
5
10
20
50
100
AMBIENT TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL JUNCT
ION CAPACITANCE
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT ,(A)
CAPACITANCE , (pF)
1.0
10
0.1
T
J
= 25 C
T
J
= 25 C, f = 1MHz
1.0
0.1
1.0
4.0
10.0
100
.01
0
0.2
0.4
0.6
0.8
1.0
PULSE WIDTH 300us
2% DUTY CYCLE
REVERS E VOLTAGE , VOLTS
1.2
1.4
1.6
1.8
INSTANTANEOUS F ORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL REVERS E CHARACTERIS TICS
100
INSTANTANEOUS
REVERSE CURRENT ,(uA)
T
J
= 125 C
10
1.0
0.1
T
J
= 25 C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERS E VOLTAGE, (%)
http://www.weitron.com.tw
WEITRON

DF01S Related Products

DF01S DF04S DF06S
Description BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER,1-PHASE FULL-WAVE,400V V(RRM),SO 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible incompatible
Maker Weitron Technology Weitron Technology Weitron Technology
package instruction R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Reach Compliance Code unknow unknow unknown
ECCN code EAR99 EAR99 EAR99
Minimum breakdown voltage 100 V 1000 V 600 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e0 e0 e0
Maximum non-repetitive peak forward current 50 A 50 A 50 A
Number of components 4 4 4
Phase 1 1 1
Number of terminals 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage 100 V 1000 V 600 V
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
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