MMBT2222 datasheet, PDF - EEWORLD Datasheet

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MMBT2222: DescriptionTRANSISTOR,BJT,NPN,30V V(BR)CEO,600MA I(C),SOT-23; CategoryDiscrete semiconductor The transistor; File Size326KB，6 Pages; ManufacturerWeitron Technology; Websitehttp://weitron.com.tw/

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MMBT2222 Overview

TRANSISTOR,BJT,NPN,30V V(BR)CEO,600MA I(C),SOT-23

MMBT2222 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Weitron Technology
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.6 A
Configuration	Single
Minimum DC current gain (hFE)	30
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.225 W
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	250 MHz

MMBT2222 Preview

MMBT2222

MMBT2222A

SOT-23

CEO

WEITRON

http://www.weitron.com.tw

MMBT2222

MMBT2222A

ELECTRICAL CHARACTERISTICS

(TA=25 C unless otherwise noted) (Countinued)

Characteristics

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC=0.1 mAdc, VCE=10 Vdc)

(IC=1.0 mAdc, VCE=10 Vdc)

(IC=10 mAdc, VCE=10 Vdc)

(IC=10 mAdc, VCE=10 Vdc, TA=-55 C)

(IC=150 mAdc, VCE=10 Vdc) (3)

(IC=150 mAdc, VCE=1.0Vdc) (3)

(IC=500 mAdc, VCE=10 Vdc) (3)

Collector-Emitter Saturation Voltage (3)

(IC=150 mAdc, IB=15mAdc)

(IC=500 mAdc, IB=50mAdc)

Base-Emitter Saturation Voltage (3)

(IC=150 mAdc, IB=15mAdc)

(IC=500 mAdc, IB=50mAdc)

hFE

100

VCE(sat)

0.6

300

0.4

0.3

1.6

1.0

1.3

1.2

2.6

2.0

Vdc

MMBT2222A ONLY

MMBT2222

MMBT2222A

MMBT2222

MMBT2222A

MMBT2222

MMBT2222A

MMBT2222

MMBT2222A

MMBT2222

MMBT2222A

VBE(sat)

SMALL-SIGNAL CHARACTERISTICS

Current-Gain-Bandwidth Product (4)

(IC=20 mAdc, VCE=20 Vdc, f=100MHz)

Output Capacitance

(VCB=10 Vdc, IE=0, f=1.0MHz)

Input Capacitance

(VEB=0.5 Vdc, IC=0, f=1.0MHz)

Input Impedance

(IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz)

(IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz)

Voltage Feeback Radio

(IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz)

(IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz)

S mall-S ignal C urrent G ain

(I C =1.0 mAdc, V C E =10V dc, f=1.0 kHz)

(I C =10 mAdc, V C E =10V dc, f=1.0 kHz)

Output Admittance

(IC=1.0 mAdc, VCE=10Vdc, f=-1.0kHz)

(IC=10 mAdc, VCE=10Vdc, f=-1.0kHz)

Collector Base Time Constant

(IE=20 mAdc, VCB=20 Vdc, f=31.8 MHz)

Noise Figure

(IC=100 µAdc, VCE=10Vdc, RS=1.0kΩ, f=1.0kHz)

MMBT2222

MMBT2222A

MMBT2222

MMBT2222A

MMBT2222

MMBT2222A

rb, Cc

hfe

hoe

5.0

200

150

4.0

Cobo

Cibo

hie

hre

250

300

2.0

0.25

8.0

1.25

8.0

4.0

300

375

MHz

kΩ

x 10-4

µmhos

WEITRON

http://www.weitron.com.tw

MMBT2222

MMBT2222A

ELECTRICAL CHARACTERISTICS

(TA=25 C unless otherwise noted) (Countinued)

Characteristics

Symbol

Min

Max

Unit

SWITCHING CHARACTERISTICS (MMBT2222A only)

Delay Time

Rise Time

Storage Time

Fall Time

(VCC=30 Vdc, VBE=(off )=-0.5Vdc,

IC=150 mAdc, IB1=15 mAdc)

(VCC=30 Vdc, IC=150 mAdc,

IB1=IB2=15 mAdc)

225

3.Pulse Test:Pulse Width

300 µs, Duty Cycle

2.0%.

4.fT is defined as the frequency at which Ihfe extrapolates to unity.

Typical Characteristics

hFE-TYPICAL PULSED CURRENT GAIN

500

VCE=5V

400

300

200

25 C

100

-40 C

0.1

0.3

Ic-COLLECTOR CURRENT (mA)

100

300

125 C

CESAT

COLLECTOR-EMITTER VOLTAGE (V)

Typical Pulsed Current Gain

vs Collector Current

Collector- Emitter Saturation

Voltage vs Collector Current

0.4

b=10

0.3

125 C

25 C

0.1

-40 C

100

500

0.2

Ic-COLLECTOR CURRENT (mA)

Base-Emitter Saturation

Voltage vs Collector Current

BESAT

BASE-EMITTER VOLTAGE (V)

b=10

BE(ON)

BASE-EMITTER ON VOLTAGE (V)

Base-Emitter ON Voltage vs

Collector Current

VCE=5V

0.8

-40 C

0.6

25 C

0.8

-40 C

25 C

0.6

125 C

0.4

125 C

0.4

100

500

0.2

0.1

Ic-COLLECTOR CURRENT (mA)

WEITRON

MMBT2222

MMBT2222A

WEITRON

http://www.weitron.com.tw

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MMBT2222 Related Products

	MMBT2222	MMBT2222A
Description	TRANSISTOR,BJT,NPN,30V V(BR)CEO,600MA I(C),SOT-23	600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Is it Rohs certified?	incompatible	incompatible
Maker	Weitron Technology	Weitron Technology
Reach Compliance Code	unknow	unknow
Maximum collector current (IC)	0.6 A	0.6 A
Configuration	Single	Single
Minimum DC current gain (hFE)	30	40
JESD-609 code	e0	e0
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.225 W	0.225 W
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	250 MHz	300 MHz

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