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32N50Q

Description
HiPerFET Power MOSFETs ISOPLUS247
File Size549KB,4 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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32N50Q Overview

HiPerFET Power MOSFETs ISOPLUS247

HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt,
Low t
rr
, HDMOS
TM
Family
IXFR 32N50Q V
DSS
I
D25
R
DS(on)
t
rr
= 500 V
= 30 A
=
0.16
= 250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AS
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
T
J
150°C, R
G
= 2
T
C
= 25°C
Maximum Ratings
500
500
±20
±30
30
120
30
1.5
45
5
310
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
mJ
V/ns
W
°C
°C
°C
°C
V~
g
ISOPLUS 247
TM
E 153432
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
t = 1 minute leads-to-tab
300
2500
6
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
500
2.5
4.5
±100
T
J
= 25°C
T
J
= 125°C
100
1
0.16
V
V
nA
µA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 1, 2
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
DS98608D(01/04)
© 2004 IXYS All rights reserved

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Description HiPerFET Power MOSFETs ISOPLUS247 HiPerFET Power MOSFETs ISOPLUS247 HiPerFET Power MOSFETs ISOPLUS247
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