S9018LT1 datasheet, PDF - EEWORLD Datasheet

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S9018LT1: DescriptionNPN General Purpose Transistors; CategoryDiscrete semiconductor The transistor; File Size2MB，3 Pages; ManufacturerWeitron Technology; Websitehttp://weitron.com.tw/

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S9018LT1 Overview

NPN General Purpose Transistors

S9018LT1 Parametric

Parameter Name	Attribute value
Maker	Weitron Technology
package instruction	,
Reach Compliance Code	unknow

S9018LT1 Preview

S9018LT1

* “G” Lead(Pb)-Free

3

1

2

SOT-23

V CEO

Value

18

25

4.0

50

200

1.14

875

S9018LT1=J8

100u

100

18

25

4.0

E=15 V

dc,

I E=

0

)

20

3.0

O

0.1

u

WEITRON

http://www.weitron.com.tw

S9018LT1

ELECTRICAL CHARACTERISTICS

(TA=25 C unless otherwise noted) (Countinued)

Characteristics

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC=1.0 mAdc, VCE=5.0 Vdc)

Collector-Emitter Saturation Voltage

(IC=10 mAdc, IB=1.0mAdc)

Base-Emitter Saturation Voltage

(IC=10 mAdc, IB=1.0mAdc)

hFE

(1)

VCE(sat)

VBE(sat)

70

-

190

0.5

1.4

-

Vdc

SMALL-SIGNAL CHARACTERISTICS

Current-Gain-Bandwidth Product

(IC=5.0 mAdc, VCE=5.0 Vdc, f=400MHz)

fT

600

-

MHz

WEITRON

http://www.weitron.com.tw

S9018LT1

V

CE

= 5V

I

B

=90uA

I

C

, CO LLECTOR CURRENT(mA)

I

B

=60uA

I

B

=50uA

I

B

=40uA

I

B

=30uA

I

B

=20uA

I

B

=10uA

h

FE

, DC CURRENT GAIN

I

B

=80uA

I

B

=70uA

V

CE

, COLLECTOR-EMITTER VOLTAGE

(VOLTS)

FIG1.

I

C

, CO LLECTOR CURRENT(mA)

FIG2.

V

BE

(sat), V

CE

(sat) , SATURATION VOLTAGE

(mA)

f

T

,

CURRENT GAIN-BANDWIDTH PRODUCT

(MHz)

I

C

=10 I

B

V

CE

= 5 V

V

BE

(sat)

V

CE

(sat)

I

C

, COLLECTOR CURRENT (mA)

I

C

, COLLECTOR CURRENT

FIG3.

FIG4.

WEITRON

http://www.weitron.com.tw

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