STM4433A datasheet, PDF - EEWORLD Datasheet

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STM4433A: DescriptionSurface Mount P-Channel Enhancement Mode MOSFET; File Size352KB，6 Pages; ManufacturerWeitron Technology; Websitehttp://weitron.com.tw/

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STM4433A Overview

Surface Mount P-Channel Enhancement Mode MOSFET

STM4433A Preview

WT4433AM

Surface Mount P-Channel

Enhancement Mode MOSFET

P b

Lead(Pb)-Free

DRAIN CURRENT

-6 AMPERES

DRAIN SOURCE VOLTAGE

-30 VOLTAGE

Features:

*Super high dense cell design for low R

DS(ON)

<35 m

Ω

= -10V

DS(ON)

<55 m

Ω

= -4.5V

*Rugged and Reliable

*SO-8 Package

SO-8

Maximum Ratings

(TA=25 C Unless Otherwise Specified)

Rating

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (TJ =125 C)

(1)

Pulsed Drain Current

(2)

Drain-Source Diode Forward Current

(1)

Power Dissipation

(1)

Maximax Junction-to-Ambient

Operating Junction and Storage

Temperature Range

Symbol

, Tstg

Value

-30

Unite

C/W

±20

-6

-30

-1.7

2.5

-55 to 150

Device Marking

WT4433AM=STM4433A

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WT4433AM

Electrical Characteristics

Static

(2)

Characteristic

=25 C Unless otherwise noted)

Symbol

(BR)DSS

GS (th)

GSS

DSS

Min

Typ

-1.9

Max

-3.0

-100

-1

Unit

Drain-Source Breakdown Voltage

=0V, I

=-250 uA

Gate-Source Threshold Voltage

, I

=-250 uA

Gate-Source Leakage Current

=0V, V

=-20V

Zero Gate Voltage Drain Current

=-24V, V

=0V

Drain-Source On-Resistance

=-10V, I

=-5.8A

=-4.5V, I

=-2.0A

On-State Drain Current

=-5V, V

=-10V

Forward Transconductance

=-15V, I

=-5.8A

-30

-1

-20

DS (

)

D(on)

8.5

Dynamic

(3)

Input Capacitance

=-15V, V

=0V, f=1MHZ

Output Capacitance

=-15V, V

=0V, f=1MHZ

Reverse Transfer Capacitance

=-15V, V

=0V, f=1MHZ

iss

oss

rss

920

270

170

Switching

(3)

Turn-On Delay Time

=-15V, V

GEN

=-10V, I

=-1A, R

GEN

Rise Time

=-15V, V

GEN

=-10V, I

=-1A, R

GEN

Turn-Off Time

=-15V, V

GEN

=-10V, I

=-1A, R

GEN

Fall Time

=-15V, V

GEN

=-10V, I

=-1A, R

GEN

Total Gate Charge

=-15V, V

=-10V, I

=-5.8A

=-15V, V

=-4.5V, I

=-5.8A

Gate-Source Charge

=-15V, V

=-10V, I

=-5.8A

Gate-Drain Charge

=-15V, V

=-10V, I

=-5.8A

Drain-Source Diode Forward Voltage

=0V, I

=-1.7A

(

)

d(off )

8.6

35.3

36.9

36.3

17.5

9.4

2.9

4.8

-0.77

Qgs

Qgd

-1.2

Note: 1. Surface Mounted on FR4 Board t

≤

10sec.

2. Pulse Test : Pulse Width

≤

300us, Duty Cycle

≤

2%.

3. Guaranteed by Design, not Subject to Production Testing.

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WT4433AM

-V

=2V

-V

=4.5V

-V

=10V

-V

=4V

-V

=3.5V

WEITRON

125 C

25 C

-55 C

0.0

0.8

1.6

2.4

3.2

4.0

4.8

-I

,DRAIN CURRENT(A)

-V

=3V

0.5

1.0

1.5

2.0

2.5

3.0

-I

, DRAIN CURRENT(A)

-V

, DRAIN-TO-SOURCE VOLTAGE(V)

-V

, GATE-TO-SOURCE VOLTAGE(V)

FIG.1. Output Characteristics

1500

1250

1000

750

250

DS(ON)

, ON-RESISTANCE(Ω)

(Normalived)

C ,CAPACITANCE(

FIG.2 Transfer Characteristics

1.8

1.6

1.4

1.2

1.0

0.8

0.6

-55

= -10V

= -5.8A

Ciss

Coss

Crss

-25

100

125

-V

, DRAIN-TO-SOURCE VOLTAGE(V)

FIG.3 Capacitance

1.3

1.2

1.1

1.0

0.8

0.6

0.4

-50 -25

DSS

,NORMALIZED

DRAIN-SOURCE BREAKDOWN VOLTAGE(V)

GATE-SOURCE THRESHOLD VOLTAGE(V)

FIG.4 On-Resistance Variation with

Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

-50 -25

75 100 125 150

Tj , DRAIN CURRENT(˚C)

= -250uA

,NORMALIZED

75 100 125 150

,JUNCTION TEMPERATURE( C)

FIG.5 Gate Threshold Variation

with Temperature

FIG.6 Breakdown Voltage Variation

with Temperature

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WT4433AM

-I

,SOURCE-DRAIN CURRENT(A)

,TRANSCONDUCTANCE(S)

20.0

10.0

WEITRON

= -15V

0.4

0.6

0.7

0.9

1.1

1.3

-I

,DRAIN-SOURCE CURRENT(A)

-V

,BODY DIODE FORWARD VOLTAGE(V)

FIG.7 Transconductance Variation

with Drain Current

-V

,GATE TO SOURCE VOLTAGE(V)

-I

, DRAIN CURRENT(A)

FIG.8 Body Diode Forward Voltage

Variation with Source Current

= -15V

= -5.8A

(ON)Limit

10ms

100ms

0.1

0.03

0.1

= -10V

Single Pulse

=25 C

,TOTAL GATE CHARGE(nC)

-V

,DRAIN-SOURCE CURRENT(V)

FIG.9 Gate Charge

-V

FIG.10 Maximum Safe Operating Area

off

90%

GEN

OUT

d(on)

OUT

d(off)

90%

10%

INVERTED

90%

50%

10%

50%

INVERTED

PULSE WIDTH

FIG.11 Switching Test Circuit

FIG.12 Switching Waveforms

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WT4433AM

r(t) ,NORMALIZED TRANSIENT

THERMAL RESISTANCE

Duty Cycle=0.5

0.2

0.1

0.05

0.02

0.01

0.0001

Single Pulse

0.001

0.01

0.1

1. R

(t)=r (t) * R

2. R

=See Datasheet

3. T

-T

= P

* R

(t)

4. Duty Cycle, D=t

100

SQUARE WAVE PULSE DURATION(SEC)

FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE

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STM4433A Related Products

	STM4433A	WT4433AM
Description	Surface Mount P-Channel Enhancement Mode MOSFET	Surface Mount P-Channel Enhancement Mode MOSFET

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