BPW77NA, BPW77NB
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): Ø 4.7
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
94
8401
• Fast response times
• Angle of half sensitivity:
ϕ
= ± 10°
• Base terminal connected
DESCRIPTION
BPW77 is a silicon NPN phototransistor with high radiant
sensitivity in hermetically sealed TO-18 package with base
terminal and glass lens. It is sensitive to visible and near
infrared radiation.
• Hermetically sealed package
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW77NA
BPW77NB
Note
Test condition see table “Basic Characteristics”
I
ca
(mA)
7.5 to 15
> 10
ϕ
(deg)
± 10
± 10
λ
0.1
(nm)
450 to 1080
450 to 1080
ORDERING INFORMATION
ORDERING CODE
BPW77NA
BPW77NB
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
REMARKS
MOQ: 1000 pcs, 1000 pcs/bulk
MOQ: 1000 pcs, 1000 pcs/bulk
PACKAGE FORM
TO-18
TO-18
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Total power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Thermal resistance junction/gase
Note
T
amb
= 25 °C, unless otherwise specified
t
≤
5s
Connected with Cu wire, 0.14 mm
2
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
25 °C
TEST CONDITION
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
R
thJC
VALUE
80
70
5
50
100
250
125
- 40 to + 125
- 40 to + 125
260
400
150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
K/W
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402
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81527
Rev. 1.5, 08-Sep-08
BPW77NA, BPW77NB
Silicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors
800
P
tot
- Total Power Dissipation (mW)
600
R
thJC
400
200
R
thJA
0
0
25
50
75
100
125
150
94
8342
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
Note
T
amb
= 25 °C, unless otherwise specified
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
I
C
= 1 mA
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
TEST CONDITION
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
SYMBOL
V
(BR)CEO
I
CEO
C
CEO
ϕ
λ
p
λ
0.1
V
CEsat
t
on
t
off
f
c
MIN.
70
1
6
± 10
850
450 to 1080
0.15
6
5
110
0.3
100
TYP.
MAX.
UNIT
V
nA
pF
deg
nm
nm
V
µs
µs
kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER
Collector light current
TEST CONDITION
PART
SYMBOL
I
ca
I
ca
MIN.
7.5
10
TYP.
MAX.
15
UNIT
mA
mA
E
e
= 1 mW/cm
2
,
λ
= 950 nm, BPW77NA
V
CE
= 5 V
BPW77NB
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
10
6
I
CEO
- Collector Dark Current (nA)
10
5
10
4
10
3
10
2
10
1
10
0
20
94
8343
2.50
I
ca rel
- Relative Collector Current
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
0
V
CE
= 5V
E
e
= 1 mW/cm
2
λ
= 950 nm
V
CE
= 20
V
E=0
50
100
150
94
8344
10 20 30 40 50 60 70
80
90 100
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Document Number: 81527
Rev. 1.5, 08-Sep-08
Fig. 3 - Relative Collector Current vs. Ambient Temperature
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403
For technical questions, contact: detectortechsupport@vishay.com
BPW77NA, BPW77NB
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
100
t
on
/t
off
- Turn-on/Turn-off Time (µs)
I
ca
- Collector Light Current (mA)
BPW77NB
10
12
10
8
6
t
on
V
CE
= 5
V
R
L
= 100
Ω
λ
= 950 nm
1
BPW77NA
4
2
0
t
off
0.1
V
CE
= 5
V
λ
= 950 nm
0.01
0.01
0.1
1
10
0
4
8
12
16
94
8349
E
e
- Irradiance (mW/cm
2
)
94
8253
I
C
- Collector Current (mA)
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
10
I
ca
- Collector Light Current (mA)
λ
= 950 nm
E
e
= 1 mW/cm
2
0.5
0.2 mW/cm
2
mW/cm
2
S (λ)
rel
- Relative Spectral Sensitivity
100
1.0
0.8
0.6
0.4
0.2
0
400
600
800
1000
λ
-
Wavelength
(nm)
1
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
0.1
0.1
1
10
94
8350
V
CE
- Collector Emitter
Voltage
(V)
94
8348
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
C
CEO
- Collector Ermitter Capacitance (pF)
20
0°
10°
20°
30°
S
rel
- Relative Sensitivity
16
f = 1 MHz
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
12
8
4
0
0.1
1
10
100
0.6
94
8351
0.4
0.2
0
0.2
0.4
0.6
94
8247
V
CE
- Collector Ermitter
Voltage
(V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
www.vishay.com
404
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81527
Rev. 1.5, 08-Sep-08
BPW77NA, BPW77NB
Silicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS
in millimeters
B
E
C
Ø 4.69
Chip position
(2.5)
6.15
± 0.25
+ 0.02
- 0.07
0.45
+ 0.02
- 0.05
13.2
± 0.7
5.5
± 0.15
2.54 nom.
technical drawings
according to DIN
specifications
Lens
± 0.05
Drawing-No.: 6.503-5023.01-4
Issue:1; 01.07.96
96 12180
4
Document Number: 81527
Rev. 1.5, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
405
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
Analogue and Mixed Signal
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