STD100N03L
STD100N03L-1
N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK
Planar STripFET™ II Power MOSFET
General features
Type
STD100N03L
STD100N03L-1
V
DSSS
30 V
30 V
R
DS(on)
I
D
Pw
3
1
2
1
<0.0055
Ω
80 A
(1)
110 W
<0.0055
Ω
80 A
(1)
110 W
3
1. Current limited by package
■
■
100% avalanche tested
Logic level threshold
DPAK
Description
This MOSFET is the latest refinement of
STMicroelectronic unique “Single Feature Size™”
stripbased process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics, low
gate charge and less critical aligment steps
therefore a remarkable manufacturing
reproducibility. This new improved device has
been specifically designed for Automotive
application and DC-DC converters.
Internal schematic diagram
Applications
■
Switching application
O
codes
Order
Part number
STD100N03LT4
STD100N03L-1
Marking
D100N03L
D100N03L-1
Package
DPAK
IPAK
Packaging
Tape & reel
Tube
so
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IPAK
August 2006
Rev 3
1/15
www.st.com
15
Contents
STD100N03L - STD100N03L-1
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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2/15
STD100N03L - STD100N03L-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
I
D (1)
I
D
I
DM (2)
P
TOT
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Drain-gate voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Value
30
± 20
80
70
320
110
0.73
3.9
-55 to 175
Max. operating junction temperature
Unit
V
V
A
A
A
W
W/°C
dv/dt
(3)
Peak diode recovery voltage slope
T
stg
T
J
Storage temperature
1. Current limited by package.
2. Pulse width limited by safe operating area
3. I
SD
≤
80A, di/dt
≤
360 A/µs, V
DS
≤
V
(BR)DSS
, T
J
≤
T
JMAX
Table 2.
Symbol
R
thJC
R
thJA
T
l
Thermal data
Parameter
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Table 3.
Symbol
b
O
so
te
le
I
AR
E
AS
r
P
Avalanche characteristics
Parameter
Value
40
Unit
A
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
V/ns
°C
Value
1.36
100
275
Unit
°C/W
°C/W
°C
Not-repetitive avalanche current
(pulse width limited by T
J
max)
Single pulsed avalanche energy
(starting T
J
= 25°C, I
D
= I
AV,
V
DD
= 24V
500
mJ
3/15
Electrical characteristics
STD100N03L - STD100N03L-1
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Test conditions
I
D
= 250µA, V
GS
= 0
V
DS
= Max rating,
V
DS
= Max rating @125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 40A
V
GS
= 5V, I
D
= 20A
Static drain-source on
resistance
V
GS
= 10 V,
I
D
= 40 A @125°C
V
GS
= 5 V,
I
D
= 20 A @125°C
1
Min.
30
1
10
±200
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Ω
Ω
Ω
0.0045 0.0055
0.008
0.01
R
DS(on)
Table 5.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Q
g
Q
gs
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
O
so
b
te
le
R
G
Q
gd
r
P
Total gate charge
Gate-source charge
Gate-drain charge
uc
od
s)
t(
so
b
-O
V
GS
= 5V
te
le
r
P
od
0.0068
0.0146
ct
u
s)
(
Test conditions
Min.
Typ.
31
2060
728
67
20
7
7.5
Max.
Unit
S
pF
pF
pF
V
DS
= 10 V
,
I
D
= 15A
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
V
DD
= 24V, I
D
= 80A
Figure 15 on page 9
f = 1MHz gate DC Bias = 0
Test signal level = 20mV
Open drain
27
nC
nC
nC
Ω
Gate input resistance
1.9
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/15
STD100N03L - STD100N03L-1
Electrical characteristics
Table 6.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 15V, I
D
= 40A,
R
G
=4.7Ω, V
GS
=10V
Figure 14 on page 9
Min.
Typ.
9
205
31
35
Max.
Unit
ns
ns
ns
ns
Table 7.
Symbol
I
SD
I
SDM(1)
V
SD(2)
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 40A, V
GS
= 0
I
SD
= 80A,
di/dt = 100A/µs,
V
DD
= 25V, T
J
= 150°C
Figure 16 on page 9
Test conditions
Min
Typ.
Max
80
320
1.3
Unit
A
A
V
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
O
so
b
te
le
r
P
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s)
t(
bs
-O
et
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P
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od
r
40
40
2
s)
t(
uc
ns
µC
A
5/15
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