DIM375WKS06-S000
DIM375WKS06-S000
IGBT Chopper Module (Upper Arm Control)
DS5732-1.0 February 2004
FEATURES
I
I
KEY PARAMETERS
V
CES
V
CE(sat)
* (typ)
I
C
I
C(PK)
(max)
(max)
600V
2.1V
375A
750A
Low Forward Voltage Drop
Isolated Copper Baseplate
APPLICATIONS
I
I
Choppers
Motor Controllers
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
The DIM375WKS06-S000 is a 600V n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module
configured with the upper arm of the bridge controlled. The
module is suitable for a variety of medium voltage applications in
motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
.
Fig. 1 Chopper circuit diagram
1(K,E)
2(A)
3(C1)
4(G
1
)
5(E
1
)
ORDERING INFORMATION
Order as:
DIM375WKS06-S000
Note: When ordering, use complete part number.
Outline type code:
W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/8
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DIM375WKS06-S000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25˚C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
T
case
= 65˚C
1ms, T
case
= 95˚C
T
case
= 25˚C, T
j
= 150˚C
V
R
= 0, t
p
= 10ms, T
vj
= 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
V
GE
= 0V
-
Test Conditions
Max.
600
±20
375
750
1736
TBD
2.5
Units
V
V
A
A
W
kA
2
s
kV
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al
2
O
3
Baseplate material: Cu
Creepage distance: 24mm
Symbol
R
th(j-c)
Parameter
Thermal resistance - transistor arm
Clearance: 13mm
CTI (Critical Tracking Index): 175
Test Conditions
Continuous dissipation -
junction to case
Min.
-
Typ.
-
Max.
72
Units
˚C/kW
R
th(j-c)
Thermal resistance - diode (per arm)
(Antiparallel and freewheel diode)
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
-
135
˚C/kW
R
th(c-h)
Thermal resistance - case to heatsin
(per module)
-
-
15
˚C/kW
T
j
Junction temperature
-
-
-
–40
3
2.5
-
-
-
-
-
150
125
125
5
5
˚C
˚C
˚C
Nm
Nm
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M6
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM375WKS06-S000
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise.
Symbol
I
CES
Parameter
Collector cut-off current
(IGBT and Diode arm)
I
GES
V
GE(TH)
V
CE(sat)†
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125˚C
V
GE
=
±20V,
V
CE
= 0V
I
C
= 15mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 350A
V
GE
= 15V, I
C
= 350A, , T
case
= 125˚C
I
F
I
FM
V
F†
Diode forward current
Diode maximum forward current
Diode forward voltage
(IGBT and Diode arm)
C
ies
L
M
R
INT
Input capacitance
Module inductance
Internal transistor resistance - per arm
DC
t
p
= 1ms
I
F
= 350A
I
F
= 350A, T
case
= 125˚C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
2.1
2.3
-
-
1.5
1.5
40
20
0.23
Max.
2
10
2
7.5
2.6
2.8
375
750
1.8
1.8
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
mΩ
Note:
†
Measured at the power busbars and not the auxiliary terminals.
L* is the circuit inductance + L
M
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/8
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DIM375WKS06-S000
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 375A, V
R
= 300V,
dI
F
/dt = 3000A/µs
Test Conditions
I
C
= 375A
V
GE
=
±15V
V
CE
= 300V
R
G(ON)
= R
G(OFF)
= 4.7Ω
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
600
250
26
200
150
16
3
20
200
5
Max.
-
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
T
case
= 125˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 375A, V
R
= 300V,
dI
F
/dt = 3000A/µs
Test Conditions
I
C
= 375A
V
GE
=
±15V
V
CE
= 300V
R
G(ON)
= R
G(OFF)
= 4.7Ω
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
Typ.
650
500
40
200
100
15
30
230
8
Max.
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM375WKS06-S000
TYPICAL CHARACTERISTICS
700
Common emitter
T
case
= 25˚C
V
ce
is measured at power
busbars and not the
auxiliary terminals
700
Common emitter
T
case
= 125˚C
V
ce
is measured at power
600 busbars and not the
auxiliary terminals
500
600
500
Collector current, I
c
- (A)
400
Collector current, I
c
- (A)
400
300
300
200
200
100
0
0
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
1
2.0
3
4
Collector-emitter voltage, V
ce
- (V)
5
100
0
0
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V
ce
- (V)
Fig.3 Typical output characteristics
45
60
Fig.4 Typical output characteristics
Conditions:
T
case
= 125ºC
40
V
cc
= 300V
R
g
= 4.7 ohms
35
E
off
E
on
E
rec
50
Switching energy, E
sw
- (mJ)
30
25
20
15
10
Switching Energy, E
sw
- (mJ)
E
on
E
off
E
rec
50
100
150
200
250
300
Collector current, I
C
- (A)
350
400
40
30
20
10
5
0
0
0
2
4
10
12
6
8
Gate resistance, R
g
- (Ohms)
14
16
Fig.4 Typical switching energy vs collector current
Fig.5 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/8
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