Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium
Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from
DC to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be
biased at 2.7V for low-voltage battery operated systems. The device provides
low NF and excellent linearity at a low cost. It can be operated over a wide
range of currents depending on the power and linearity requirements.
The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post
annealing process to mitigate tin whisker formation and is RoHS compliant per
EU Directive 2002/95. The package body is manufactured with green molding
compounds that contain no antimony trioxide or halogenated fire retardants.
Pb
&
Green
Package
High IP3, Medium Power Discrete
SiGe Transistor
RoHS Compliant
Product Features
•
•
•
•
•
•
•
DC-3.5 GHz Operation
Lead Free, RoHS Compliant & Green Package
1.5 dB NF
MIN
@ 2.44 GHz
15.6 dB Gmax @ 2.44 GHz
P
1dB
= +20.6 dBm @ 2.44 GHz
OIP
3
= +34.6 dBm @ 2.44 GHz
Low Cost, High Performance, Versatility
Typical Gmax, OIP3, P1dB @3.3V, 86mA
31
28
25
OIP3
38
35
32
29
Gmax
26
23
P1dB
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
20
17
22
19
16
13
10
OIP
3
, P
1dB
(dBm)
Gmax (dB)
Applications
•
•
•
•
•
Analog and Digital Wireless Systems
3G, Cellular, PCS, RFID
Fixed Wireless, Pager Systems
PA stage for Medium Power Applications
AN-079 contains detailed application circuits
Frequency
Min.
Typ.
Max.
Frequency (GHz)
Symbol
Parameters
Units
G
MAX
S
21
G
P
1dB
OIP
3
NF
NFmin
h
FE
BV
CEO
Rth, j-l
V
CE
I
CE
Test Conditions:
Maximun Available Gain
Z
S
=Z
S
*, Z
L
=Z
L
*
Insertion Gain
[1]
Power Gain
[2]
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Output Power at 1dB Compression
[2]
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Output Third Order Intercept Point
[2]
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Noise Figure
[2]
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Minimum Noise Figure with I
CE
= 25mA
Z
S
=
Γ
OPT
, Z
L
=Z
L
*
DC Current Gain
Collector - Emitter Breakdown Voltage
Thermal Resistance (Junction - lead)
Device Operating Voltage (collector- emitter)
Device Operating Current (collector - emitter)
dB
dB
dB
dBm
dBm
dB
dB
880 MHz
2440 MHz
880 MHz
880 MHz
2440 MHz
880 MHz
2440 MHz
880 MHz
2440 MHz
880 MHz
2440 MHz
880 MHz
2440 MHz
120
5.7
22.9
15
18
19
14
20
20.6
33.4
34.6
3.1
2.4
1.0
1.5
180
6
151
300
V
°C/W
V
mA
3.8
95
OIP
3
Tone Spacing = 1MHz, Pout per tone = 5 dBm
[2] Data with Application Circuit
V
CE
= 3.3V, I
CE
= 86mA Typ. (unless noted otherwise), T
L
= 25°C
[1] 100% production tested using 50 ohm contact board (no matching circuitry)
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102583 Rev B
Preliminary
SGA-8543Z Medium Power SiGe Discrete Transistor
Absolute Maximum Ratings
Parameter
Max Device Current (I
CE
)
Max Device Voltage (V
CE
)
Max. RF Input Power* (See Note)
Absolute Limit
105 mA
4.5 V
+18 dBm
Max. Dissipated Power
Max. Junction Temp. (T
J
)
Operating Temp. Range (T
L
)
Max. Storage Temp.
*Note:
Load condition 1, Z
L
= 50 Ohms
Load condition 2, ZL = 10:1 VSWR
See Graph
+150°C
See Graph
Total Dissipated Power (W)
SGA-8543Z Power Derating Curve
0.6
0.5
0.4
0.3
0.2
Operational Limit (Tj<140C)
0.1
0.0
-40
ABS MAX (Tj<150C)
+150°C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Bias Conditions should also satisfy the following expression:
T
L
=T
LEAD
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
-10
20
50
80
110
140
170
Lead Temperature (C)
Reliability & Qualification Information
Parameter
ESD Rating - Human Body Model (HBM)
Moisture Sensitivity Level
www.sirenza.com
Rating
Class 1B
MSL 1
This product qualification report can be downloaded at
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Typical performance - Engineering Application Circuits (See AN-079)
Freq
(MHz)
880
2440
Test Conditions:
V
CE
(V)
3.3
3.3
V
S
= 5V
I
CE
(mA)
86
86
P
1dB
(dBm)
20.0
20.6
I
S
= 96mA Typ.
OIP
3
(dBm)
33.4
34.6
Gain
(dB)
19.0
14.0
S11
(dB)
-15.0
-16.0
S22
(dB)
-11.0
-22.0
NF
(dB)
3.1
2.4
Z
SOPT
(Ω)
22.7 - j2.5
9.3 - j9.9
TL = 25°C
Z
LOPT
(Ω)
32.5 + j11.9
21.4 + j1.9
OIP
3
Tone Spacing = 1MHz, Pout per tone = 5 dBm
Data above represents typical performance of the application circuits noted in Application Note AN-079. Refer to the application note
for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions
and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or call your local
sales representative.
C
B
Z
LOPT
Z
SOPT
E
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-102583 Rev B
Preliminary
SGA-8543Z Medium Power SiGe Discrete Transistor
40
35
30
Insertion Gain & Isolation (I
CE
= 86mA)
DCIV Curves
0
-5
-10
180
160
140
Gain, Gmax (dB)
Isolation (dB)
25
20
15
10
5
0
-5
0
1
Gmax
Isolation
-15
-20
-25
-30
120
I
C
(mA)
100
80
60
40
20
0
0
1
2
3
4
5
Gain
-35
-40
-45
2
3
4
5
6
7
8
Frequency (GHz)
V
CE
(Volts)
I
B
= 0.1 - 1.1 mA, T=25
°
C
Typical Performance - De-embedded S-parameters
Note: S-parameters are de-embedded to the device leads with Z
S
=Z
L
=50Ω.
The device was mounted on Sirenza’s recommended evaluation board.
De-embedded S-parameters can be downloaded from our website (www.sirenza.com)
S11 Vs.
Frequency
6 GHz
5 GHz
8 GHz
S22 Vs.
Frequency
6 GHz
8 GHz
3.5 GHz
3.5 GHz
5 GHz
2.44 GHz
2.44 GHz
1.96 GHz
1.96 GHz
.88 GHz
.88 GHz
.5 GHz
.5 GHz
.2 GHz
.05 GHz
.2 GHz
.05 GHz
.1 GHz
.1 GHz
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-102583 Rev B
Preliminary
SGA-8543Z Medium Power SiGe Discrete Transistor
Pin Description
Pin #
Function
Description
Part Number Ordering Information
Part Number
SGA-8543Z
Reel Size
7"
Devices / Reel
3000
1
2
3
4
RF input / Base Bias. External DC blocking
capacitor required
Connection to ground. Use via holes to
GND
reduce lead inductance. Place via holes as
close to lead as possible
RF Out / Collector bias. External DC
RF OUT
blocking capacitor required
GND
Same as pin 2
RF IN
Suggested Pad Layout
Part Identification
4
3
85Z
1
2
Use multiple plated-through vias holes located close to the
package pins to ensure a good RF ground connection to a
continuous groundplane on the backside of the board.
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