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BPY-62-3

Description
Phototransistors PHOTODIODE
CategoryLED optoelectronic/LED   
File Size472KB,12 Pages
ManufacturerOsram Opto Semiconductor
Websitehttps://www.osram.com/index-2.jsp
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Phototransistors PHOTODIODE

BPY-62-3 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerOsram Opto Semiconductor
Product CategoryPhototransistors
RoHSDetails
Package / CaseTO-18
Peak Wavelength830 nm
Maximum On-State Collector Current100 mA
Dark Current50 nA
Rise Time7 us
Fall Time7000 ns
Pd - Power Dissipation200 mW
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 125 C
Height6.2 mm
Length5.6 mm
TypeChip
Width5.6 mm
Half Intensity Angle Degrees8 deg
NumOfPackaging1
Factory Pack Quantity1000
2015-08-21
Silicon NPN Phototransistor
NPN-Silizium-Fototransistor
Version 1.2
BPY 62
Features:
Spectral range of sensitivity:
(typ) 400 ... 1100
nm
Package:
Metal Can (TO-18), hermetically sealed
Special:
Base connection
Suitable up to 125 °C
HIgh photosensitivity
Available in groups
Besondere Merkmale:
Spektraler Bereich der Fotoempfindlichkeit:
(typ) 400 ... 1100 nm
Gehäuse:
Metall Gehäuse (TO-18), hermetisch
dicht
Besonderheit:
Basisanschluss
Geeignet bis 125 °C
Hohe Fotoempfindlichkeit
Gruppiert lieferbar
Anwendungen
Lichtschranken
Industrieelektronik
Messen / Steuern / Regeln
Applications
Photointerrupters
Industrial electronics
For control and drive circuits
Ordering Information
Bestellinformation
Type:
Typ:
Photocurrent
Fotostrom
λ = 950 nm, E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
I
PCE
[µA]
BPY 62
BPY 62-3/4
BPY 62-4
Note:
Anm.:
Ordering Code
Bestellnummer
≥ 500
800 ... 2500
1250 ... 2500
Q60215Y0062
Q62702P5198
Q60215Y1113
Only one bin within one packing unit (variation less than 2:1)
Nur eine Gruppe pro Verpackungseinheit (Streuung kleiner 2:1)
2015-08-21
1

BPY-62-3 Related Products

BPY-62-3 BPY-62
Description Phototransistors PHOTODIODE Phototransistors PHOTODIODE
Product Attribute Attribute Value Attribute Value
Manufacturer Osram Opto Semiconductor Osram Opto Semiconductor
Product Category Phototransistors Phototransistors
RoHS Details Details
Package / Case TO-18 TO-18
Peak Wavelength 830 nm 830 nm
Maximum On-State Collector Current 100 mA 100 mA
Dark Current 50 nA 50 nA
Pd - Power Dissipation 200 mW 200 mW
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 125 C + 125 C
Height 6.2 mm 6.2 mm
Length 5.6 mm 5.6 mm
Type Chip Chip
Width 5.6 mm 5.6 mm
Half Intensity Angle Degrees 8 deg 8 deg
NumOfPackaging 1 1
Factory Pack Quantity 1000 1000
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