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TLP785FF

Description
Transistor Output Optocouplers 80v 5000vrms GaAs 60mA 50 to 600
CategoryLED optoelectronic/LED   
File Size362KB,17 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TLP785FF Overview

Transistor Output Optocouplers 80v 5000vrms GaAs 60mA 50 to 600

TLP785FF Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerToshiba Semiconductor
Product CategoryTransistor Output Optocouplers
RoHSDetails
Package / CaseDIP-4
Output TypeNPN Phototransistor
Number of Channels1 Channel
If - Forward Current16 mA
Maximum Collector Emitter Voltage80 V
Maximum Collector Current10 mA
Isolation Voltage5000 Vrms
Maximum Collector Emitter Saturation Voltage0.4 V
Vf - Forward Voltage1.3 V
Vr - Reverse Voltage5 V
Pd - Power Dissipation240 mW
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 110 C
PackagingTube
Configuration1 Channel
Description/Function-
Height3.5 mm
Length4.6 mm
Width6.5 mm
Collector-Emitter Breakdown Voltage80 V
Mounting StyleThrough Hole
Fall Time3 us
NumOfPackaging1
Reference Voltage-
Rise Time2 us
Factory Pack Quantity100
TLP785,TLP785F
TOSHIBA Photocoupler
GaAs IRED & Photo−Transistor
TLP785,TLP785F
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage
Circuits
The TOSHIBA TLP785 consists of a silicone phototransistor optically
coupled to a gallium arsenide (GaAs) infrared emitting diode in a four
lead plastic DIP (DIP4) with having high isolation voltage
(AC: 5kV
RMS
(min)).
TLP785F is a lead forming type for the long creepage surface mounting
of TLP785.
TLP785
Unit: mm
TOSHIBA
Weight: 0.32 g (typ.)
11-5L1
TLP785: 7.62mm pitch type DIP4
TLP785F: 10.16mm pitch type DIP4
Collector-emitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Isolation voltage: 5000V
rms
(min.)
UL approved: UL1577, file No. E67349
BSI under application: BS EN60065:2002
BS EN60950-1:2006
SEMKO under application:EN60065:2002
EN60950-1:2001, EN60335-1:2002
Option(D4)type
VDE approved: DIN EN60747-5-2
(Note): When an EN60747-5-2 approved type is needed,
Please designate “Option (D4)”
TLP785F
Unit: mm
TOSHIBA
.
Construction mechanical rating
7.62mm Pitch
Standard Type
Creepage distance
Clearance
Insulation thickness
Inner creepage distance
7.0mm(min)
7.0mm(min)
0.4mm(min)
4.0mm(min)
10.16mm Pitch
TLPxxxF Type
8.0mm(min)
8.0mm(min)
0.4mm(min)
4.0mm(min)
11-5L102
Weight: 0.32g (typ.)
Pin Configurations
(top view)
1
2
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
4
3
1
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