TC7WZ00FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WZ00FU,TC7WZ00FK
2 Input Nand Gate
Features
·
·
·
·
·
·
·
High output drive: ±24 mA (min) @V
CC
= 3 V
Super high speed operation: t
pd
2.4 ns (typ.) @V
CC
= 5 V,
50 pF
Operation voltage range: V
CC (opr)
= 1.65~5.5 V
Latch-up performance: ±500 mA or more
ESD performance: ±200 V or more (JEITA)
±2000 V or more (MIL)
Power down protection is provided on all inputs and outputs.
Matches the performance of TC74LCX series when operated
at 3.3 V V
CC
.
TC7WZ00FK
TC7WZ00FU
Marking
SM8
Type name
US8
Z 00
Lot No.
WZ
00
Weight
SSOP8-P-0.65
SSOP8-P-0.50A
: 0.02 g (typ.)
: 0.01 g (typ.)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Power supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Lead temperature (10s)
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
T
L
Rating
-0.5~6
-0.5~6
-0.5~6
-20
-20
±50
±50
300 (SM8)
200 (US8)
-65~150
260
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
GND 4
5 2A
1A 1
1B 2
2Y 3
8 V
CC
7 1Y
6 2B
Pin Assignment
(top view)
1
2002-01-16
TC7WZ00FU/FK
Truth Table
A
L
L
H
H
B
L
H
L
H
Y
H
H
H
L
IN B
Logic Diagram
IN A
&
OUT Y
Recommended Operating Conditions
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Symbol
V
CC
V
IN
V
OUT
T
opr
Rating
1.65~5.5
1.5~5.5
0~5.5
0~5.5
0~V
CC
-40~85
0~20 (V
CC
=
1.8 V
±
0.15 V,
2.5 V
±
0.2 V)
Input rise and fall time
d
t
/d
v
0~10 (V
CC
=
3.3 V
±
0.3 V)
0~5 (V
CC
=
5.5 V
±
0.5 V)
ns/V
(Note 2)
V
(Note 3)
°C
(Note 1)
V
Unit
V
Note 1: Data retention only
Note 2: V
CC
=
0 V
Note 3: High or low state
2
2002-01-16
TC7WZ00FU/FK
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
Test Condition
V
CC
(V)
1.65~
1.95
2.3~5.5
1.65~
1.95
2.3~5.5
1.65
I
OH
= -100 mA
2.3
3.0
4.5
High level
V
OH
V
IN
=
I
= -4
mA
V
IH
or V
IL OH
I
OH
= -8
mA
I
OH
= -16
mA
I
OH
= -24
mA
Output
voltage
I
OH
= -32
mA
1.65
2.3
3.0
3.0
4.5
1.65
I
OL
=
100
mA
2.3
3.0
4.5
Low level
V
OL
V
IN
=
V
IH
I
OL
=
4 mA
I
OL
=
8 mA
I
OL
=
16 mA
I
OL
=
24 mA
I
OL
=
32 mA
Input leakage current
Power off leakage current
Quiescent supply current
I
IN
I
OFF
I
CC
V
IN
=
5.5 V or GND
V
IN
or V
OUT
=
5.5 V
V
IN
=
5.5 V or GND
1.65
2.3
3.0
3.0
4.5
0~5.5
0.0
1.65~5.5
Min
0.75
´
V
CC
0.7
´
V
CC
¾
¾
1.55
2.2
2.9
4.4
1.29
1.9
2.4
2.3
3.8
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Ta
=
25°C
Typ.
¾
¾
¾
¾
1.65
2.3
3.0
4.5
1.52
2.15
2.8
2.68
4.2
0
0
0
0
0.08
0.1
0.15
0.22
0.22
¾
¾
¾
Max
¾
¾
0.25
´
V
CC
0.3
´
V
CC
¾
¾
¾
¾
¾
¾
¾
¾
¾
0.1
0.1
0.1
0.1
0.24
0.3
0.4
0.55
0.55
±1
1
1
¾
¾
¾
¾
¾
¾
Ta
= -40~85°C
Min
0.75
´
V
CC
0.7
´
V
CC
¾
¾
1.55
2.2
2.9
4.4
1.29
1.9
2.4
2.3
3.8
¾
¾
Max
¾
¾
V
0.25
´
V
CC
0.3
´
V
CC
¾
¾
¾
¾
¾
¾
¾
¾
¾
0.1
0.1
0.1
0.1
0.24
0.3
0.4
0.55
0.55
±10
10
10
mA
mA
mA
V
Unit
High level
Input
voltage
Low level
V
IH
¾
V
IL
¾
3
2002-01-16
TC7WZ00FU/FK
AC Characteristics
(unless otherwise specified, Input: t
r
=
t
f
=
3 ns)
Characteristics
Symbol
Test Condition
V
CC
(V)
1.8
±
0.15
C
L
=
15 pF, R
L
=
1 MW
2.5
±
0.2
3.3
±
0.3
5.0
±
0.5
C
L
=
50 pF, R
L
=
500
W
Input capacitance
Power dissipation
capacitance
C
IN
C
PD
¾
(Note)
5.5
3.3
±
0.3
5.0
±
0.5
0~5.5
3.3
Min
2.0
1.2
0.8
0.5
1.2
0.8
¾
¾
¾
Ta
=
25°C
Typ.
5.3
3.2
2.4
1.9
3.0
2.4
3.0
22
32
Max
9.6
5.3
3.7
2.9
4.6
3.6
¾
¾
¾
Ta
= -40~85°C
Min
2.0
1.2
0.8
0.5
1.2
0.8
¾
¾
¾
Max
9.8
5.7
4.0
3.2
4.9
3.9
¾
¾
¾
pF
pF
ns
Unit
Propagation delay time
t
pLH
t
pHL
Note: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr)
=
C
PD
½V
CC
½f
IN
+
I
CC
/2
4
2002-01-16
TC7WZ00FU/FK
Package Dimensions
Weight: 0.02 g (typ.)
5
2002-01-16
京公网安备 11010802033920号
EEWORLD
