Features
•
•
•
•
•
•
Three Input Comparators with Schmitt-trigger Characteristic
Input Clamping Current Capability of ±10 mA
Integrated Protection Cells (EMC, ESD, RF) Dedicated to all Input Stages
Common Shutdown by Junction-temperature Monitor
Reset with Hysteresis at Low Voltage
ESD Protection Acording to Human Body Model:
±2000 V (C = 100 pF, R = 1.5 kΩ)
•
Output Stages:
– Short-circuit Protected
– Load-dump Protected at 1 kΩ
– No Crosstalk on Adjacent Channels
– Jump Start Possible
Triple Driver IC
with Thermal
Monitoring
U6803B
Description
The triple driver IC includes three non-inverted and current-limited output stages with
an open collector. Common thermal shutdown protects the outputs against critical
junction temperatures. Each output can sink a current of 20 mA, parallel output opera-
tion is possible. The digital inputs have Schmitt-trigger function with pull-up resistors to
5 V.
Figure 1.
Block Diagram
V
O1
1
3
V
O2
V
O3
4
V
S
7
Thermal
shutdown
2
GND
Under-
voltage
detection
V
S
= 5 V
8
V
I1
6
V
I2
5
V
I3
V
S
Rev. 4762A–AUTO–11/03
U6803B
Basic Circuitry
The integrated circuit U6803B requires a stabilized supply voltage (V
S
= 5 V ±5%) to
comply with its electrical characteristics. An external buffer capacitor of C = 100 nF is
recommended. An integrated 14 V Zener diode between V
S
and ground protects the
supply pin.
All input stages are provided with an integrated 250 k
W
pull-up resistor and can be
directly connected to a microcontroller.
All output stages are open collectors, each capable of sinking 20 mA. Recommended
external components:
•
•
Pull-up resistor, R = 1 k
W
Capacitor to GND, C = 470 pF, see Figure 3 on page 4
Functional Description
General
ON state: A low level at the input stage activates the corresponding output stage.
OFF state: The internal pull-up resistor provides a high level to the input comparator and
deactivates the output stage.
7 V Zener diodes between each input pin and GND are capable of ±10 mA clamping
currents without crosstalk on adjacent input stages.
A total clamping current of ±30 mA should be observed with respect to the power
dissipation.
Current Limitation of the
Output Stages and
Overtemperature
Shutdown
Transients and Load
Dump
A temperature-dependent current limitation in the range of 25 to 100 mA protects the
stages in case of a short. Additionally, the chip temperature is monitored. For
T
Chip
> 148
°
C, all outputs are disabled and automatically enabled with a hysteresis of
T
Chip
> 5
°
C.
An integrated 28 V Zener diode protects each output stage against transients and load-
dump (Schaffner pulses). With the help of an external 1 k
W
resistor, the output transistor
is capable of handling the corresponding current which flows during each of these condi-
tions. Apart from that, the outputs are short-circuit and overload protected.
When the supply voltage is switched on, a power-on reset pulse is generated internally
which disables all output stages until a defined supply-voltage level is reached. The
low-voltage detection is provided with a hysteresis of V
hyst
= 0.5 V typically.
Low-voltage Detection
3
4762A–AUTO–11/03
Figure 3.
Application Schematic
V
S
= 5 V
V
Batt
Load
100 nF
V
I1
Micro-
controller
V
I2
V
I3
V
O1
R
R
R
3
×
1 kΩ
U6803B
V
O2
V
O3
C
C
C
3
×
470 pF
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Supply voltage
Ambient temperature range
Storage temperature range
Maximum junction temperature
Symbol
V
S
T
amb
T
stg
T
j
Value
7.0
-40 to +125
-50 to +150
+150
Unit
V
°C
°C
°C
Thermal Resistance
Parameters
Junction ambient
Symbol
R
thJA
Value
160
Unit
K/W
4
U6803B
4762A–AUTO–11/03
U6803B
Electrical Characteristics
V
S
= 5 V ±5%, T
amb
= 27
°
C, reference point pin 2 (GND), unless otherwise specified, see Figure 1 on page 1 and
Figure 3 on page 4
Parameters
Supply, Pin 7
Supply voltage
Supply current
Low-voltage detection threshold
Low-voltage hysteresis
Temperature shutdown
Temperature shutdown hysteresis
Input; Pins 5, 6, 8
Zener-diode protection voltage
Zener-diode clamping current
Pull-up resistor
Switching threshold
Hysteresis
Output; Pins 1, 3, 4
Zener-diode protection voltage
Integrated capacitor
Leakage current
Saturation voltage
Current limitation
Propagation delay
(470 pF, 1 kW, 20 V)
(I
O
= 20 mA)
I
Leak
V
Sat
I
limit
t
d
25
I
O
= 10 mA
V
O
26.5
5
2.5
0.7
100
5
V
pF
µA
V
mA
µs
OFF
ON
I
I
= 10 mA
V
I
I
I
R
I
V
I
V
I
V
hyst
170
250
3.3
1.8
1.5
6.7
8.5
±10
305
V
mA
kW
V
V
V
Inputs open
Inputs closed to GND
ON
OFF
V
S
I
S
I
S
V
TH(ON)
V
TH(OFF)
V
hyst
T
Chip
T
hyst
4.75
0.8
7
3.7
3.0
0.55
140
5
5.25
3.2
13
4.6
3.8
1.05
149
V
mA
mA
V
V
V
°C
°C
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
5
4762A–AUTO–11/03
PCB Design
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