DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3060
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3060 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3060
2SK3060-S
2SK3060-ZJ
2SK3060-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•
Low on-state resistance
R
DS(on)1
= 13 mΩ MAX. (V
GS
= 10 V, I
D
= 35 A)
R
DS(on)2
= 20 mΩ MAX. (V
GS
= 4.0 V, I
D
= 35 A)
•
Low C
iss
: C
iss
= 2400 pF TYP.
•
Built-in gate protection diode
Note
This package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (Pulse)
Note1
(TO-220AB)
60
±20
+20,
−10
±70
±210
70
1.5
150
–55 to +150
35
122.5
V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
V
DSS
V
GSS(AC)
V
GSS(DC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
5
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20 V
→
0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13099EJ3V0DS00 (3rd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1997,2000
2SK3060
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
GS
= 10 V, I
D
= 35 A
V
GS
= 4.0 V, I
D
= 35 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 35 A
V
DS
= 60 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
I
D
= 35 A
V
GS
= 10 V
V
DD
= 30 V
R
G
= 10
Ω
I
D
= 70 A
V
DD
= 48 V
V
GS
= 10 V
I
F
= 70 A, V
GS
= 0 V
I
F
= 70 A, V
GS
= 0 V
di/dt = 100 A /
µ
s
2400
700
280
30
600
140
450
50
7.5
18
1.0
55
75
1.0
15
MIN.
TYP.
11
16
1.5
50
10
±10
MAX.
13
20
2.0
UNIT
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
50
Ω
L
V
DD
5
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
I
D
90%
90%
V
GS
V
GS
Wave Form
90%
0
10%
I
AS
I
D
V
DD
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
I
D
Wave Form
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D13099EJ3V0DS
2SK3060
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
25
50
75
100 125 150 175 200
100
80
60
40
20
120
100
80
60
40
20
0
25
50
75
100 125 150 175 200
0
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
5
1000
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
100
R
D
S(
o
Lim
n)
d
ite
(@
1
S
=
V
G
0V
)
I
D(pulse)=
210 A
P
W
1m
1
s
10
0 m
0m
s
s
ati
on
Lim
ite
d
10
0
=1
µ
s
0
µ
s
DC
Dis
sip
10
I
D(DC)=
70 A
1.0
T
C
= 25˚C
0.1 Single Pulse
1.0
0.1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10000
r
th(t)
- Transient Thermal Resistance - ˚C/W
1000
100
R
th(ch-A)
= 83.3 ˚C/W
10
R
th(ch-C)
= 1.79 ˚C/W
1
0.1
0.01
10
µ
Single Pulse
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D13099EJ3V0DS
3
2SK3060
FORWARD TRANSFER CHARACTERISTICS
100
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
250
I
D
- Drain Current - A
10
I
D
- Drain Current - A
T
A
= 125˚C
75˚C
25˚C
−25˚C
200
150
100
50
V
GS
= 10 V
1
V
GS
= 4.0 V
0.1
Pulsed
V
DS
= 10 V
4
5
0
1
2
3
0
0.5
1.0
1.5
2.0
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
| y
fs
| - Forward Transfer Admittance - S
100
T
ch
=
−25˚C
25˚C
75˚C
125˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
10
20
1
10
I
D
= 35 A
0.1
0.1
V
DS
= 10 V
Pulsed
1.0
10
100
0
10
V
GS
- Gate to Source Voltage - V
20
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
75
Pulsed
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
2.0
V
DS
= 10 V
I
D
= 1 mA
1.5
50
1.0
25
V
GS
= 4.0 V
V
GS
= 10 V
0
0.1
1
10
100
1000
0.5
0
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet D13099EJ3V0DS
2SK3060
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
I
SD
- Diode Forward Current - A
Pulsed
40
100
30
V
GS
= 4.0 V
V
GS
= 10 V
V
GS
= 0 V
20
10
10 V
10
I
D
= 35 A
−50
0
50
100
150
1
0
0.1
0
0.5
1.0
1.5
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
C
oss
1000
C
rss
V
GS
= 0 V
f = 1 MHz
10000
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10
Ω
t
r
1000
t
f
t
d(off)
t
d(on)
100
100
10
0.1
1
10
100
10
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
V
DS
- Drain to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
18
40
V
DD
= 48 V
30 V
12 V
V
GS
16
14
30
20
V
DS
10
12
10
8
6
4
2
0
20
40
60
80
0
100
10
1
0.1
1
10
100
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
di/dt = 100 A /
µ
s
V
GS
= 0 V
I
D
= 70 A
Data Sheet D13099EJ3V0DS
5
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