DATA SHEET
NEC's NPN SiGe RF IC UPA901TU
IN A 8-PIN LEAD-LESS MINIMOLD
FEATURES
DESCRIPTION
NEC's UPA901TU is a silicon germanium HBT IC designed
for the power amplifier of 5.8 GHz cordless phone and other
5.8 GHz applications. This IC consists of two stage amplifiers
and has excellent performance, high efficiency, high gain,
low power consumption.
NEC's UPA901TU is packaged in surface mount 8-pin lead-
less minimold plastic package.
This device is fabricated with our SiGe HBT process UHS2-
HV technology.
•
•
•
•
•
OUTPUT POWER:
P
out
= 19 dBm @ P
in
=
−3
dBm, V
CE
= 3.6 V, f = 5.8 GHz
LOW POWER:
I
C
= 90 mA @ P
in
=
−3
dBm, V
CE
= 3.6 V, f = 5.8 GHz
SINGLE POWER SUPPLY OPERATION:
V
CE
= 3.6 V
BUILT-IN BIAS CIRCUIT
8-PIN LEAD-LESS MINIMOLD:
(2.0
×
2.2
×
0.5 mm)
APPLICATIONS
•
5.8 GHz Cordless Phones
•
5.8 GHz Band DSRC (Dedicated Short Range
Communication) System
•
5 GHz Band Video Transmitter
ORDERING INFORMATION
PART NUMBER
UPA901TU
UPA901TU-T3
ORDER NUMBER
UPA901TU-A
UPA901TU-T3-A
QUANTITY
50 pcs (Non reel)
5 kpcs/reel
PACKAGE
8-pin lead-less
minimold( Pb-Free)
MARKING
A901
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 1, Pin 8 face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
California Eastern Laboratories
UPA901TU
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
(B1)
4
(E)
3
(N.C.)
2
(C2)
1
Q2
Bias
Circuit
Q1
5
(C1)
6
(E)
7
(B2)
8
(Bias)
ABSOLUTE MAXIMUM RATINGS
(T
A
=+25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current of Q1
Collector Current of Q2
Bias Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Operating Ambient Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C1
I
C2
I
BIAS
P
tot
Note
T
j
T
stg
T
A
RATINGS
15
4.5
2
75
250
25
410
150
−65
to +150
−40
to +85
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
Note
Mounted on 20
×
20
×
0.8 mm (t) glass epoxy PCB (FR-4)
THERMAL RESISTANCE
(T
A
=+25ºC)
PARAMETER
Channel to Ambient Resistance
SYMBOL
R
th (j-a1)
Note
R
th (j-a2)
Free Air
TEST CONDITIONS
RATINGS
150
TBD
UNIT
°C/W
°C/W
Note
Mounted on 20
×
20
×
0.8 mm (t) glass epoxy PCB (FR-4)
RECOMMENDED OPERATING RANGE
(All Parameters)
PARAMETER
Collector to Emitter Voltage
Total Current
Input Power
SYMBOL
V
CE
I
total
P
in
MIN.
−
−
−
TYP.
3.6
90
−3
MAX.
4.5
300
+5
UNIT
V
mA
dBm
UPA901TU
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C)
-DC CHARACTERISTICS-
(1) Q1
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Current Ratio (I
C (set) 1
/I
BIAS
)
SYMBOL
I
CBO
I
EBO
h
FE
Note
TEST CONDITIONS
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 6 mA
V
CE
= 3.6 V, V
BE
= V
BIAS
= 0.865 V
MIN.
−
−
80
2
TYP.
−
−
120
4.5
MAX.
60
120
160
9
UNIT
nA
nA
−
−
CR1
(2) Q2
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Current Ratio (I
C (set) 2
/I
BIAS
)
SYMBOL
I
CBO
I
EBO
h
FE
Note
TEST CONDITIONS
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 20 mA
V
CE
= 3.6 V, V
BE
= V
BIAS
= 0.865 V
MIN.
−
−
80
8
TYP.
−
−
120
10
MAX.
200
400
160
13
UNIT
nA
nA
−
−
CR2
(3) Bias Circuit
PARAMETER
Bias Circuit Current
SYMBOL
I
BIAS
TEST CONDITIONS
V
BIAS
= 0.865 V
MIN.
−
TYP.
4
MAX.
−
UNIT
mA
Note
Pulse measurement: PW
≤
350
µs,
Duty Cycle
≤
2%
I
BIAS
, I
C (set) 1
, I
C (set) 2
MEASUREMENT CIRCUIT
I
C (set) 2
(B1)
4
(E)
3
(N.C.)
2
(C2)
1
V
BE
(B1)
4
(E)
3
(N.C.)
2
(C2)
1
(B1)
4
(E)
3
(N.C.)
2
(C2)
1
V
CE
Q2
Bias
Circuit
6
(E)
7
(B2)
8
(Bias)
I
BIAS
V
BIAS
5
(C1)
Q2
Bias
Circuit
6
(E)
I
C (set) 1
V
CE
7
(B2)
8
(Bias)
5
(C1)
Q2
Bias
Circuit
6
(E)
V
BE
7
(B2)
8
(Bias)
Q1
5
(C1)
Q1
Q1
I
BIAS
I
C (set) 1
I
C (set) 2
I
C (set) 1
= CR1
×
I
BIAS
= 4.5
×
I
BIAS
(TYP.)
I
C (set) 2
= CR2
×
I
BIAS
= 4.5
×
I
BIAS
(TYP.)
The application circuits and their parameters are for reference only and are not intended for actual design-ins.
UPA901TU
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C)
-RF CHARACTERISTICS-
(1) Q1
PARAMETER
Insertion Power Gain (Q1)
Maximum Available Power Gain (Q1)
Output Power (Q1)
Collector Current (Q1)
SYMBOL
| S
21e
|
2
MAG1
P
out
1
I
CC
1
TEST CONDITIONS
V
CE
= 3.6 V, I
C
= 12 mA, f = 5.8 GHz
V
CE
= 3.6 V, I
C
= 12 mA, f = 5.8 GHz
V
CE
= 3.6 V, I
C (set)
= 12 mA,
f = 5.8 GHz, P
in
=
−3
dBm
V
CE
= 3.6 V, I
C (set)
= 12 mA,
f = 5.8 GHz, P
in
=
−3
dBm
MIN.
8.5
13.5
10.2
−
TYP.
10.0
15.0
11.2
20
MAX.
11.5
−
−
−
UNIT
dB
dB
dBm
mA
(2) Q2
PARAMETER
Insertion Power Gain (Q2)
Maximum Available Power Gain (Q2)
Output Power (Q2)
Collector Current (Q2)
SYMBOL
| S
21e
|
2
MAG2
P
out
2
I
CC
2
TEST CONDITIONS
V
CE
= 3.6 V, I
C
= 40 mA, f = 5.8 GHz
V
CE
= 3.6 V, I
C
= 40 mA, f = 5.8 GHz
V
CE
= 3.6 V, I
C (set)
= 40 mA,
f = 5.8 GHz, P
in
= 11 dBm
V
CE
= 3.6 V, I
C (set)
= 40 mA,
f = 5.8 GHz, P
in
= 11 dBm
MIN.
2
8.5
17.5
−
TYP.
3.5
10.0
19.0
70
MAX.
5
10.5
−
−
UNIT
dB
dB
dBm
mA
(3) Q1 + Q2, 2 stage Amplifiers
PARAMETER
Output Power (Q1 + Q2)
SYMBOL
P
out
TEST CONDITIONS
V
CE
= 3.6 V, R
BIAS
= 680
Ω,
f = 5.8 GHz, P
in
=
−3
dBm
Note
V
CE
= 3.6 V, R
BIAS
= 680
Ω,
f = 5.8 GHz, P
in
=
−3
dBm
Note
MIN.
17.5
TYP.
19.0
MAX.
−
UNIT
dBm
Total Current (Q1 + Q2)
I
total
−
90
−
mA
Note
by
MEASUREMENT CIRCUIT 1
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