Freescale Semiconductor
Technical Data
MRF9080
Rev. 5, 12/2004
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for GSM 900 MHz frequency band, the high gain and broadband
performance of these devices make them ideal for large−signal, common−
source amplifier applications in 26 volt base station equipment.
•
Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large−Signal Impedance Parameters
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9080LR3
MRF9080LSR3
GSM 900 MHz FREQUENCY BAND,
75 W, 26 V
LATERAL N−CHANNEL
RF POWER MOSFETs
CASE 465−06, STYLE 1
NI−780
MRF9080LR3
CASE 465A−06, STYLE 1
NI−780S
MRF9080LSR3
Table 1. Maximum Ratings
Rating
Drain−Source Voltage
Gate−Source Voltage
Total Device Dissipation @ T
C
=
25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
−0.5,
+65
−0.5,
+15
250
1.43
−65
to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.7
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
NOTE
−
CAUTION
−
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2004. All rights reserved.
MRF9080LR3 MRF9080LSR3
5−1
Freescale Semiconductor
Wireless RF Product Device Data
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vds, V
GS
= 0)
Gate−Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 )
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 700 mAdc)
Drain−Source On−Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6 Adc)
Dynamic Characteristics
(1)
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
(2)
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, I
DQ
= 600 mA, f = 921 and 960 MHz)
Common−Source Amplifier Power Gain @ 70 W (Min)
(V
DD
= 26 Vdc, I
DQ
= 600 mA, f = 921 and 960 MHz)
Drain Efficiency @ P
out
= 70 W
(V
DD
= 26 Vdc, I
DQ
= 600 mA, f = 921 and 960 MHz)
Drain Efficiency @ P1dB
(V
DD
= 26 Vdc, I
DQ
= 600 mA, f = 921 and 960 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 70 W, I
DQ
= 600 mA, f = 921 and 960 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 600 mA,
f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
P
1dB
G
ps
η1
η2
IRL
Ψ
68
17
47
—
9.5
75
18.5
52
55
12.5
—
20
—
—
—
W
dB
%
%
dB
C
oss
C
rss
—
—
73
2.9
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.0
—
—
—
—
3.7
0.19
8.0
4.0
—
0.4
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
No Degradation In Output Power
Before and After Test
1. Part is internally input matched.
2. To meet application requirements, Freescale test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency
MRF9080LR3 MRF9080LSR3
5−2
Freescale Semiconductor
Wireless RF Product Device Data
V
GG
R3
+
C7
R2
C6
R1
C1
C2
C4
C8
C9
C10
C18
+
V
DD
C17
C5
DUT
C11 C12 C13
C15
C14
C16
RF
OUTPUT
RF
INPUT
C3
Figure 1. Broadband GSM 900 Test Circuit Schematic
Table 5. Broadband GSM 900 Test Circuit Component Designations and Values
Part
C1
C2
C3
C4, C5, C9, C10, C12, C13
C6, C16, C17
C7, C18
C8, C11
C14
C15
R1, R2, R3
WB1, WB2
Raw PCB Material
PCB
Description
4.7 pF Chip Capacitor
2.7 pF Chip Capacitor
1.5 pF Chip Capacitor
5.6 pF Chip Capacitors
22 pF Chip Capacitors
10
µF,
35 V Tantalum Chip Capacitors
10 pF Chip Capacitors
0.8 pF Chip Capacitor
8.2 pF Chip Capacitor
1.0 kΩ, 1/8 W Chip Resistors (0805)
Beryllium Copper Wear Blocks
30 mil Glass
Teflon
®
,
ε
r
= 2.55
Etched Circuit Board
0.004″ x 0.210″ x 0.520″
TLX8−0300
C−GY−00−001−02
Taconic
Cibel
Part Number
100B4R7BW
100B2R7BW
100B1R5BW
100B5R6CW
100B220GW
293D106X9035D2T
100B100JW
100B0R8BW
100B8R2GW
Manufacturer
ATC
ATC
ATC
ATC
ATC
Sprague−Vishay
ATC
ATC
ATC
MRF9080LR3 MRF9080LSR3
Freescale Semiconductor
Wireless RF Product Device Data
5−3
C7
C18
R3
R2
C6
C17
V
GG
V
DD
RF INPUT
C1
C2
C3
R1 C5
WB1
C4
C11 C12 C13
WB2
C15
C16
C14
RF OUTPUT
CUT OUT AREA
C8 C9 C10
MRF9080
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. Broadband GSM 900 Test Circuit Component Layout
MRF9080LR3 MRF9080LSR3
5−4
Freescale Semiconductor
Wireless RF Product Device Data
V
GG
+
C6
U1
R1
C5
V
DD
+
C9
R2
R3
P1
R4
T1
+
C4
C3
C15
R5
R6
C7
DUT
C10
C13
C14
RF
OUTPUT
RF
INPUT
C1
C2
C11
C8
C12
Figure 3. Broadband GSM 900 Optimized Demo Board Schematic
Table 6. Broadband GSM 900 Optimized Demo Board Component Designations and Values
Part
C1
C2
C3, C15
C4, C6
C5
C7, C8
C9
C10, C11
C12, C13
C14
P1
R1
R2
R3
R4
R5, R6
T1
U1
Description
4.7 pF Chip Capacitor, ACCU−P (0805)
3.9 pF Chip Capacitor, ACCU−P (0805)
22 pF Chip Capacitors, ACCU−P (0805)
22
mF,
35 V Tantalum Chip Capacitors
1.0
mF
Chip Capacitor, ACCU−P (0805)
5.6 pF Chip Capacitors, ACCU−P (0805)
220
mF,
63 V Electrolytic Capacitor
3.3 pF Chip Capacitors, ACCU−P (0805)
2.2 pF Chip Capacitors, ACCU−P (0805)
4.7 pF Chip Capacitor
5.0 kΩ Potentiometer CMS Cermet Multi−turn
10
Ω,
1/8 W Chip Resistor (0805)
1.0 kΩ, 1/8 W Chip Resistor (0805)
1.2 kΩ, 1/8 W Chip Resistor (0805)
2.2 kΩ, 1/8 W Chip Resistor (0805)
1.0 kΩ, 1/8 W Chip Resistors (0805)
Bipolar NPN Transistor, SOT−23
Voltage Regulator, Micro−8
RF Connectors, Type SMA
Substrate = Taconic RF35, Thickness 0.5 mm
#BC847ALT1
#LP2951ACDM−5.0R2
#R125510001
ON Semiconductor
ON Semiconductor
Radial
#08051J8R2CBT
#08051J2R2CBT
#100B
#3224W
AVX
AVX
ATC
Bourns
Part Number
#08051J3R9CBT
#08051J3R9CBT
#08051J221
#T491X226K035AS4394
#08053G105ZATEA
#08051J5R18CBT
Manufacturer
AVX
AVX
AVX
Kemet
AVX
AVX
MRF9080LR3 MRF9080LSR3
Freescale Semiconductor
Wireless RF Product Device Data
5−5
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