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BLF10M6LS160U

Description
RF MOSFET Transistors BLF10M6LS160/LDMOST/STANDARD M
Categorysemiconductor    Discrete semiconductor   
File Size965KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF MOSFET Transistors BLF10M6LS160/LDMOST/STANDARD M

BLF10M6LS160U Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
TechnologySi
PackagingTube
NumOfPackaging1
Factory Pack Quantity60
BLF10M6160; BLF10M6LS160
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to
1000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
920 to 960
V
DS
(V)
32
P
L(AV)
(W)
32
G
p
(dB)
22.5
D
(%)
27
ACPR
(dBc)
41
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency range

BLF10M6LS160U Related Products

BLF10M6LS160U BLF10M6160U
Description RF MOSFET Transistors BLF10M6LS160/LDMOST/STANDARD M RF MOSFET Transistors BLF10M6160/LDMOST/STANDARD MAR
Product Attribute Attribute Value Attribute Value
Manufacturer NXP NXP
Product Category RF MOSFET Transistors RF MOSFET Transistors
Technology Si Si
Packaging Tube Tube
Factory Pack Quantity 60 60
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