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AUIRLR2905TR

Description
MOSFET AUTO 55V 1 N-CH HEXFET 27mOhms
Categorysemiconductor    Discrete semiconductor   
File Size248KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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AUIRLR2905TR Overview

MOSFET AUTO 55V 1 N-CH HEXFET 27mOhms

AUIRLR2905TR Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage55 V
Id - Continuous Drain Current42 A
Rds On - Drain-Source Resistance27 mOhms
Vgs - Gate-Source Voltage16 V
Qg - Gate Charge32 nC
Minimum Operating Temperature- 55 C
ConfigurationSingle
Pd - Power Dissipation110 W
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height2.3 mm
Length6.5 mm
Transistor Type1 N-Channel
Width6.22 mm
Fall Time15 ns
NumOfPackaging3
Rise Time84 ns
Factory Pack Quantity2000
Typical Turn-Off Delay Time26 ns
Typical Turn-On Delay Time11 ns
Unit Weight0.139332 oz
AUTOMOTIVE GRADE
AUIRLR2905
AUIRLU2905
HEXFET
®
Power MOSFET
D
Advanced Planar Technology
Logic-Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified
V
(BR)DSS
R
DS(on)
max.
I
D
D
S
55V
27m
42A
G
S
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
D-Pak
AUIRLRU2905
G
D
G
I-Pak
AUIRLU2905
S
D
G
S
Gate
Drain
Source
Base part number Package Type
AUIRLR2905
Dpak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Quantity
75
2000
3000
3000
75
Complete Part Number
AUIRLR2905
AUIRLR2905TR
AUIRLR2905TRL
AUIRLR2905TRR
AUIRLU2905
AUIRLU2905
Ipak
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Max.
42
30
160
110
0.71
Units
A
W
W/°C
V
mJ
A
mJ
°C
™
Ù
h
d
± 16
210
200
25
11
-55 to + 175
300
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
™
Soldering Temperature, for 10 seconds (1.6mm from case )
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
www.irf.com
© 2012 International Rectifier
June 5, 2012 PD-97623A
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