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DB3J208K0L

Description
Schottky Diodes & Rectifiers SCHOTTKY BARRIER FLT LD 2.0x2.1mm
CategoryDiscrete semiconductor    diode   
File Size494KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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Schottky Diodes & Rectifiers SCHOTTKY BARRIER FLT LD 2.0x2.1mm

DB3J208K0L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSC-85, 3 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.45 V
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-F3
Maximum non-repetitive peak forward current2 A
Number of components1
Number of terminals3
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Maximum output current0.7 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage25 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DB3J208K
Silicon epitaxial planar type
For high speed switching circuits
Features
Low forward voltage V
F
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: 3G
Packaging
DB3J208K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
*1
Non-repetitive peak forward surge current
*2
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
T
j
T
opr
T
stg
Rating
20
25
700
2
125
–40 to +85
–55 to +125
Unit
V
V
mA
A
°C
°C
°C
1: Anode
2: N.C.
3: Cathode
Panasonic
JEITA
Code
3
SMini3-F2-B
SC-85
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
1
2
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*1
Symbol
V
F
I
R
C
t
t
rr
I
F
= 700 mA
V
R
= 20 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 10 mA , R
L
= 100
12
4.3
Conditions
Min
Typ
Max
0.45
200
Unit
V
mA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
*1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 10 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: May 2013
Ver. CED
1

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