DG611A, DG612A, DG613A
Vishay Siliconix
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches
DESCRIPTION
The DG611A, DG612A and DG613A contain four
independently selectable SPST switches. They offer
improved performance over the industry standard DG611
series. The DG611A and DG612A have all switches normally
closed and normally open respectively, while the DG613A
has 2 normally open and 2 normally closed switches.
They are designed to operate from a 2.7 V to 12 V single
supply or from ± 2.7 V to ± 5 V dual supplies and are fully
specified at + 3 V, + 5 V and ± 5 V. All control logic inputs have
guaranteed 2 V logic high limits when operating from + 5 V or
± 5 V supplies and 1.4 V when operating from a + 3 V supply.
The DG611A, DG612A and DG613A switches conduct
equally well in both directions and offer rail to rail analog
signal handling.
1 pC low charge injection, coupled with very low switch
capacitance: 2 pF, fast switching speed: t
on
/t
off
27 ns/16 ns
and excellent 3 dB bandwidth: 720 MHz, make these
products ideal for precision instrumentation, high-end data
acquisition, automated test equipment and high speed
communication applications.
Operation temperature is specified from - 40 °C to + 125 °C.
The DG611A, DG612A and DG613A are available in 16 lead
SOIC, TSSOP and the space saving 1.8 mm x 2.6 mm
miniQFN packages.
FEATURES
•
Halogen-free according to IEC 61249-2-21
Definition
• Low charge injection (1 pC typ.)
• Leakage current < 0.25 nA at 85 °C
• Low switch capacitance (C
soff
2 pF typ.)
• Low R
DS(on)
- 115
max.
• Fully specified with single supply operation at 3 V, 5 V and
dual supplies at ± 5 V
• Low voltage, 2.5 V CMOS/TTL compatible
• 720 MHz, 3 dB bandwidth
• Excellent isolation performance (62 dB at 10 MHz)
• Excellent crosstalk performance (90 dB at 10 MHz)
• Fully specified from - 40 °C to + 85 °C and - 40 °C to + 125 °C
• 16 lead SOIC, TSSOP and miniQFN package (1.8 mm x 2.6 mm)
•
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
•
•
•
•
•
Precision instrumentation
Medical instrumentation
Automated test equipment
High speed communications applications
High-end data acquisition
Sample and hold applications
Sample and hold systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG611A
SOIC/TSSOP
16
DG611A
miniQFN
D
1
IN
1
IN
2
D
2
15
14
13
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top
View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
NC
S
3
D
3
IN
3
Pin 1
Device Marking: Kxx for DG611A
(miniQFN16)
Lxx for DG612A
Pxx for DG613A
xx = Date/Lot Traceability Code
Kxx
GND
S
4
3
4
S
1
V-
1
2
12
11
10
9
S
2
V+
NC
S
3
5
6
7
8
D
4
IN
4
IN
3
D
3
Top
View
TRUTH TABLE
Logic
0
1
Document Number: 69904
S11-1066-Rev. C, 30-May-11
DG611A
On
Off
DG612A
Off
On
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG611A, DG612A, DG613A
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
V + to V -
GND to V -
Digital
Inputs
a
, V
S
, V
D
Limit
14
7
(V -) - 0.3 V to (V +) + 0.3 V
or 30 mA, whichever occurs first
30
100
- 65 to 150
16-pin TSSOP
c
Power Dissipation (Package)
b
16-pin miniQFN
d
16-pin Narrow SOIC
e
16-pin TSSOP
Thermal Resistance (Package)
b
16-pin miniQFN
16-pin Narrow SOIC
450
525
640
178
152
125
°C/W
mW
mA
°C
V
Unit
Continuous Current (Any Terminal)
Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle)
Storage Temperature
Notes:
a. Signals on SX, DX, or INX exceeding V + or V - will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 5.6 mW/°C above 70 °C.
d. Derate 6.6 mW/°C above 70 °C.
e. Derate 8 mW/°C above 70 °C.
f. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal
is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection.
Document Number: 69904
S11-1066-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG611A, DG612A, DG613A
Vishay Siliconix
SPECIFICATIONS FOR DUAL SUPPLIES
(V + = + 5 V, V - = - 5 V)
Test Conditions
Unless Otherwise Specified
V + = + 5 V, V - = - 5 V
V
IN
= 2 V, 0.8 V
a
- 40 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Full
I
S
= 1 mA, V
D
= - 3 V, 0 V, + 3 V
I
S
= 1 mA, V
D
= ± 3 V
I
S
= 1 mA, V
D
= - 3 V, 0 V, + 3 V
V + = 5.5 V, V - = - 5.5 V
V
D
= + 4.5 V/- 4.5 V
V
S
= - 4.5 V/+ 4.5 V
V + = 5.5 V, V - = - 5.5 V
V
D
= V
S
= ± 4.5 V
V
IN
Under Test = 0.8 V
V
IN
Under Test = 2 V
f = 1 MHz
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
Room
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
Room
72
0.7
25
± 0.02
± 0.02
± 0.02
- 0.1
-2
- 0.1
-2
- 0.1
-6
- 0.1
- 0.1
Typ.
c
Min.
d
-5
Max.
d
5
115
160
4
6.5
40
60
0.1
2
0.1
2
0.1
6
0.1
0.1
- 0.1
- 0.25
- 0.1
- 0.25
- 0.1
- 0.25
- 0.1
- 0.1
Min.
d
-5
Max.
d
5
115
140
4
5.5
40
55
0.1
0.25
0.1
0.25
0.1
0.25
0.1
0.1
nA
Unit
V
Parameter
Analog Switch
Analog Signal Range
e
On-Resistance
On-Resistance Match
On-Resistance Flatness
Switch Off
Leakage Current
Switch On
Leakage Current
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
Input Capacitance
e
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
e
Off Isolation
e
Channel-to-Channel
Crosstalk
e
3 dB Bandwidth
e
Source Off Capacitance
e
Drain Off Capacitance
e
Drain On Capacitance
e
Total Harmonic
Distortion
e
Power Supplies
Power Supply Current
Negative Supply Current
Ground Current
Symbol
V
ANALOG
R
ON
R
ON
R
FLATNESS
I
S(off)
I
D(off)
I
D(on)
I
IL
I
IH
C
IN
0.005
0.005
2
27
16
15
µA
pF
t
ON
t
OFF
t
BBM
Q
OIRR
X
TALK
BW
C
S(off)
C
D(off)
C
D(on)
THD
R
L
= 300
,
C
L
= 35 pF
V
S
= ± 3 V, see figure 1
DG613A only, V
S
= 3 V
R
L
= 300
,
C
L
= 35 pF
V
g
= 0 V, R
g
= 0
,
C
L
= 1 nF
R
L
= 50
,
C
L
= 5 pF
f = 10 MHz
R
L
= 50
,
C
L
= 5 pF
f = 1 MHz; V
S
= 0 V
f = 1 MHz; V
S
= V
D
= 0 V
Signal = 1 V
RMS
, 20 Hz to 20 kHz,
R
L
= 600
55
90
35
50
2
2
55
75
35
45
ns
1
- 62
- 90
720
2
3
9
0.01
pC
dB
MHz
pF
%
I+
I-
I
GND
V + = + 5 V, V - = - 5 V
V
IN
= 0 V or 5 V
Room
Full
Room
Full
Room
Full
0.001
- 0.001
- 0.001
- 0.1
-1
- 0.1
-1
0.1
1
- 0.1
-1
- 0.1
-1
0.1
1
µA
www.vishay.com
4
Document Number: 69904
S11-1066-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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