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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS5240V
40 V low V
CEsat
PNP transistor
Product data sheet
2003 Jan 30
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
FEATURES
•
Low collector-emitter saturation voltage V
CEsat
•
High collector current capability I
C
and I
CM
•
High collector current gain (h
FE
) at high I
C
•
High efficiency leading to reduced heat generation
•
Reduced printed-circuit board area requirements.
APPLICATIONS
•
Power management:
– DC-DC converter
– Supply line switching
– Battery charger
– LCD back lighting.
•
Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps,
LEDs)
– Inductive load drivers (e.g. relay, buzzers and
motors).
DESCRIPTION
PNP transistor providing low V
CEsat
and high current
capability in a SOT666 plastic package.
NPN complement: PBSS4240V.
1
2
3
PBSS5240V
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CRP
R
CEsat
PINNING
PIN
1
2
3
4
5
6
collector
collector
base
emitter
collector
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX.
−40
−1.8
−2
<250
UNIT
V
A
A
mΩ
handbook, halfpage
6
5
4
1, 2, 5, 6
3
4
MARKING
TYPE NUMBER
PBSS5240V
MARKING CODE
52
Top view
MAM446
Fig.1 Simplified outline (SOT666) and symbol.
2003 Jan 30
2
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CRP
I
CM
I
B
I
BM
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak repetitive collector current
peak collector current
base current (DC)
peak base current
total power dissipation
T
amb
≤
25
°C;
note 3
T
amb
≤
25
°C;
note 4
T
amb
≤
25
°C;
note 1
T
amb
≤
25
°C;
notes 2 and 3
T
stg
T
j
T
amb
Notes
1. Device mounted on a ceramic circuit board, Al
2
O
3
, standard footprint.
2. Operated under pulsed conditions: duty cycle
δ ≤
20%, pulse width t
p
≤
30 ms.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
note 1
note 2
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS5240V
MAX.
−40
−40
−5
−1.8
−2
−3
−300
−1
300
500
900
1.2
+150
150
+150
V
V
V
A
A
A
UNIT
mA
A
mW
mW
mW
W
°C
°C
°C
4. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to
ambient
note 1
note 2
note 3
notes 1 and 4
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
3. Device mounted on a ceramic circuit board, Al
2
O
3
, standard footprint.
4. Operated under pulsed conditions: duty cycle
δ ≤
20%, pulse width t
p
≤
30 ms.
Soldering
The only recommended soldering method is reflow soldering.
CONDITIONS
VALUE
410
215
140
110
UNIT
K/W
K/W
K/W
K/W
2003 Jan 30
3
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
=
−40
V; I
E
= 0
V
CB
=
−40
V; I
E
= 0; T
amb
= 150
°C
V
CE
=
−30
V; I
B
= 0
V
EB
=
−5
V; I
C
= 0
V
CE
=
−5
V; I
C
=
−1
mA
V
CE
=
−5
V; I
C
=
−100
mA
V
CE
=
−5
V; I
C
=
−500
mA
V
CE
=
−5
V; I
C
=
−1
A
V
CE
=
−5
V; I
C
=
−2
A; note 1
V
CEsat
collector-emitter saturation voltage
I
C
=
−100
mA; I
B
=
−1
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−1
A; I
B
=
−100
mA; note 1
I
C
=
−2
A; I
B
=
−200
mA
R
CEsat
V
BEsat
V
BEon
f
T
C
c
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
=
−1
A; I
B
=
−100
mA; note 1
I
C
=
−1
A; I
B
=
−100
mA
V
CE
=
−5
V; I
C
=
−1
A
I
C
=
−50
mA; V
CE
=
−10
V;
f = 100 MHz
V
CB
=
−10
V; I
E
= I
e
= 0; f = 1 MHz
MIN.
−
−
−
−
300
300
250
160
50
−
−
−
−
−
−
−
150
−
PBSS5240V
TYP.
−
−
−
−
−
−
−
−
−
−80
−100
−180
−370
180
−
−
−
−
MAX.
−100
−50
−100
−100
−
800
−
−
−
−120
−145
−250
−530
<250
−1.1
−1
−
12
UNIT
nA
μA
nA
nA
mV
mV
mV
mV
mΩ
V
V
MHz
pF
2003 Jan 30
4
Analog electronics
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