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DISCRETE SEMICONDUCTORS
DATA SHEET
PMMT591A
PNP BISS transistor
Product data sheet
Supersedes data of 2001 Jun 11
2004 Jan 13
NXP Semiconductors
Product data sheet
PNP BISS transistor
FEATURES
•
High current (max. 1 A)
•
Low collector-emitter saturation voltage ensures
reduced power consumption.
APPLICATIONS
•
Battery powered units where high current and low power
consumption are important.
DESCRIPTION
PNP BISS (Breakthrough In Small Signal) transistor in a
SOT23 plastic package. NPN complement: PMMT491A.
handbook, halfpage
PMMT591A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
MARKING
TYPE NUMBER
PMMT591A
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
PMMT591A
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
9B*
Top view
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 13
2
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−40
−40
−5
−1
−2
−1
250
+150
150
+150
V
V
V
A
A
A
mW
°C
°C
°C
UNIT
NXP Semiconductors
Product data sheet
PNP BISS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
B
= 0; V
CE
=
−30
V
I
C
= 0; V
EB
=
−5
V
V
CE
=
−5
V; note 1
I
C
=
−1
mA
I
C
=
−100
mA
I
C
=
−500
mA
I
C
=
−1
A
V
CEsat
collector-emitter saturation voltage
note 1
I
C
=
−100
mA; I
B
=
−1
mA
I
C
=
−500
mA; I
B
=
−20
mA
I
C
=
−1
A; I
B
=
−100
mA
V
BEsat
V
BE
C
c
f
T
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
I
C
=
−1
A; I
B
=
−50
mA; note 1
V
CE
=
−5
V; I
C
=
−1
A; note 1
I
E
= I
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
=
−50
mA; V
CE
=
−10
V; f = 100 MHz
−
−
−
−
−
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PMMT591A
VALUE
500
UNIT
K/W
MIN.
−
−
−
300
300
250
160
MAX.
−100
−100
−100
−
800
−
−
−200
−350
−500
−1.1
−1
12
−
UNIT
nA
nA
nA
mV
mV
mV
V
V
pF
MHz
150
2004 Jan 13
3
NXP Semiconductors
Product data sheet
PNP BISS transistor
PMMT591A
handbook, halfpage
1200
MLD638
handbook, halfpage
−10
MLD639
hFE
VBE
800
(1)
(V)
−1
(2)
(1)
(2)
(3)
400
(3)
0
10
−1
−
1
−
10
−
10
2
−
10
3
−
10
4
IC (mA)
V
CE
=
−5
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
−10
−1
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
V
CE
=
−5
V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
−10
3
handbook, halfpage
VCEsat
(mV)
−10
2
(1)
MLD640
handbook, halfpage
300
MLD641
fT
(MHz)
200
(3)
(2)
−10
100
−1
−1
−10
−10
2
−10
3
IC (mA)
−10
4
0
0
−200
−400
−600
−800
IC (mA)
−
1000
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
=
−10
V.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
2004 Jan 13
4
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