CGHV60075D5
75 W, 6.0 GHz, GaN HEMT Die
Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN
has superior properties compared to silicon or gallium arsenide, including higher breakdown
voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs
offer greater power density and wider bandwidths compared to Si and GaAs transistors.
FEATURES
•
•
•
•
•
•
•
•
19 dB Typical Small Signal Gain at 4 GHz
17 dB Typical Small Signal Gain at 6 GHz
65% Typical Power Added Efficiency at 4 GHz
60% Typical Power Added Efficiency at 6 GHz
75 W Typical P
SAT
50 V Operation
High Breakdown Voltage
Up to 6 GHz Operation
APPLICATIONS
•
•
•
•
•
2-Way Private Radio
Broaband Amplifiers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Packaging Information
•
•
Bare die are shipped on tape or in Gel-Pak® containers.
Non-adhesive tacky membrane immobilizes die during shipment.
mber 2016
Rev 1.1 – Septe
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Drain Current
1
Symbol
V
DSS
V
GS
T
STG
T
J
I
MAX
I
GMAX
R
θJC
R
θJC
T
S
Rating
150
-10, +2
-65, +150
225
6.3
10
2.67
1.66
320
Units
V
DC
V
DC
˚C
˚C
A
mA
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C, 41.6W Dissipation
85˚C, 41.6W Dissipation
30 seconds
Maximum Forward Gate Current
Thermal Resistance, Junction to Case (packaged)
2
Thermal Resistance, Junction to Case (die only)
Mounting Temperature
Note
1
Current limit for long term reliable operation.
Note
2
Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier.
Electrical Characteristics (Frequency = 6 GHz unless otherwise stated; T
C
= 25˚C)
Characteristics
DC Characteristics
Gate Pinch-Off Voltage
Drain Current
1
Drain-Source Breakdown Voltage
On Resistance
Gate Forward Voltage
RF Characteristics
Small Signal Gain
Saturated Power Output
2,3
Drain Efficiency
3
Intermodulation Distortion
G
SS
P
SAT
η
Symbol
Min.
Typ.
Max.
Units
Conditions
V
P
I
DSS
V
BD
R
ON
V
G-ON
-3.8
8
150
–
–
-3.0
10
–
0.28
1.9
–2.3
–
–
–
–
V
A
V
Ω
V
V
DS
= 10 V, I
D
= 10 mA
V
DS
= 6 V, V
GS
= 2.0 V
V
GS
= -8 V, I
D
= 10 mA
V
DS
= 0.1 V
I
GS
= 10 mA
–
–
–
–
17
75
60
-30
–
–
–
–
dB
W
%
dBc
V
DD
= 50 V, I
DQ
= 125 mA
V
DD
= 50 V, I
DQ
= 125 mA
V
DD
= 50 V, I
DQ
= 125 mA, P
SAT
= 75 W
V
DD
= 50 V, I
DQ
= 125 mA,
P
OUT
= 75 W PEP
No damage at all phase angles,
V
DD
= 50 V, I
DQ
= 125 mA
P
OUT
= 75 W CW
IM3
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
VSWR
–
–
10 : 1
Y
C
GS
C
DS
C
GD
–
–
–
9.51
3.6
0.26
–
–
–
pF
pF
pF
V
DS
= 50 V, V
gs
= -8 V, f = 1 MHz
V
DS
= 50 V, V
gs
= -8 V, f = 1 MHz
V
DS
= 50 V, V
gs
= -8 V, f = 1 MHz
Notes:
1
Scaled from PCM data
2
P
SAT
is defined as I
G
= 1.0 mA.
3
Drain Efficiency = P
OUT
/ P
DC
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2
CGHV60075D5 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
DIE Dimensions (units in microns)
Overall die size 3000 x 820 (+0/-50) microns, die thickness 100 microns.
All Gate and Drain pads must be wire bonded for electrical connection.
Assembly Notes:
•
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at
www.cree.com/rf/document-library
•
•
•
•
•
•
Vacuum collet is the preferred method of pick-up.
The backside of the die is the Source (ground) contact.
Die back side gold plating is 5 microns thick minimum.
Thermosonic ball or wedge bonding are the preferred connection methods.
Gold wire must be used for connections.
Use the die label (XX-YY) for correct orientation.
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
II (200 < 500 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
3
CGHV60075D5 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 2. - CGHV60075D G
MAX
and K Factor vs. Frequency at Tcase = 25°C
V
DD
= 50V, I
DQ
= 125mA
Figure 1. - CGHV60075D5 G
MAX
and K Factor vs. Frequency at Tcase = 25°C
V
DD
= 50V, I
DQ
= 125 mA
Product Ordering Information
Order Number
Description
Unit of Measure
CGHV60075D5
Bare Die
Each
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
4
CGHV60075D5 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Die S-Parameters (Small Signal, V
DS
= 50 V, I
DQ
= 125 mA, magnitude / angle)
Frequency
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
3.2
3.4
3.6
3.8
4
4.2
4.4
4.6
4.8
5
5.2
5.4
5.6
5.8
6
Mag S11
0.93309
0.93352
0.93452
0.93586
0.93743
0.93917
0.94101
0.94292
0.94485
0.9468
0.94872
0.95062
0.95247
0.95426
0.956
0.95767
0.95926
0.96079
0.96225
0.96364
0.96496
0.96621
0.9674
0.96853
0.96959
0.9706
0.97246
0.97412
0.97561
0.97695
0.97815
0.97923
0.9802
0.98108
0.98187
0.98259
0.98324
0.98383
0.98437
0.98487
0.98532
Ang S11
-154.44
-158.34
-161.14
-163.24
-164.87
-166.17
-167.24
-168.13
-168.89
-169.55
-170.12
-170.64
-171.1
-171.51
-171.89
-172.24
-172.56
-172.86
-173.14
-173.41
-173.65
-173.89
-174.11
-174.32
-174.52
-174.71
-175.07
-175.4
-175.71
-175.99
-176.26
-176.5
-176.74
-176.96
-177.17
-177.36
-177.55
-177.73
-177.91
-178.07
-178.23
Mag S21
14.266
11.838
10.06
8.7019
7.6297
6.761
6.0431
5.4398
4.926
4.4834
4.0987
3.7616
3.4641
3.2003
2.9648
2.7539
2.5641
2.3927
2.2375
2.0963
1.9677
1.8502
1.7425
1.6437
1.5528
1.4689
1.3198
1.1918
1.081
0.98461
0.90032
0.82619
0.76072
0.70262
0.65085
0.60454
0.56297
0.52552
0.49168
0.46099
0.4331
Ang S21
88.053
83.444
79.434
75.832
72.531
69.468
66.6
63.9
61.348
58.931
56.635
54.451
52.373
50.392
48.503
46.699
44.976
43.33
41.754
40.247
38.802
37.416
36.087
34.811
33.584
32.404
30.177
28.105
26.175
24.373
22.681
21.091
19.592
18.175
16.832
15.558
14.343
13.185
12.078
11.017
9.9987
Mag S12
0.014402
0.01433
0.014195
0.014019
0.013813
0.013583
0.013336
0.013076
0.012806
0.01253
0.012249
0.011966
0.011683
0.011401
0.011122
0.010846
0.010574
0.010307
0.010045
0.0097893
0.0095396
0.0092961
0.0090588
0.0088279
0.0086033
0.0083851
0.0079668
0.0075724
0.0072005
0.0068495
0.0065185
0.0062057
0.0059099
0.0056299
0.0053644
0.0051122
0.0048724
0.0046441
0.0044262
0.0042182
0.0040191
Ang S12
-0.85181
-5.2391
-9.0268
-12.407
-15.485
-18.326
-20.972
-23.449
-25.779
-27.974
-30.047
-32.007
-33.861
-35.619
-37.283
-38.863
-40.36
-41.781
-43.13
-44.411
-45.629
-46.787
-47.888
-48.935
-49.933
-50.882
-52.647
-54.252
-55.712
-57.041
-58.254
-59.361
-60.372
-61.295
-62.137
-62.903
-63.603
-64.237
-64.81
-65.327
-65.79
Mag S22
0.35448
0.3779
0.40373
0.43075
0.45814
0.48532
0.51193
0.5377
0.56247
0.58611
0.60859
0.62986
0.64994
0.66885
0.68662
0.70331
0.71895
0.73359
0.74731
0.76014
0.77216
0.78341
0.79393
0.80379
0.81303
0.82169
0.83741
0.85128
0.86354
0.87439
0.88404
0.89265
0.90034
0.90725
0.91345
0.91905
0.92411
0.9287
0.93287
0.93667
0.94015
Ang S22
-119.95
-122.32
-124.1
-125.62
-127.01
-128.36
-129.69
-131
-132.31
-133.6
-134.86
-136.11
-137.32
-138.51
-139.66
-140.77
-141.85
-142.89
-143.9
-144.87
-145.8
-146.7
-147.57
-148.4
-149.2
-149.97
-151.43
-152.78
-154.03
-155.19
-156.27
-157.28
-158.21
-159.09
-159.91
-160.68
-161.41
-162.09
-162.73
-163.34
-163.92
To download the s-parameters in s2p format, go to the CGHV60075D5 Product Page and click the documentation tab.
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
5
CGHV60075D5 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Talking
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