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BUJD203AX127

Description
Bipolar Transistors - BJT NPN 425 V 4 A
Categorysemiconductor    Discrete semiconductor   
File Size272KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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Bipolar Transistors - BJT NPN 425 V 4 A

BUJD203AX127 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryBipolar Transistors - BJT
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220F-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max425 V
Collector- Base Voltage VCBO850 V
Collector-Emitter Saturation Voltage0.29 V
Maximum DC Collector Current4 A
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max32
DC Collector/Base Gain hfe Min10
NumOfPackaging1
Pd - Power Dissipation26 W
Factory Pack Quantity1000
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
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