The DG2015 is a dual double-pole/double-throw monolithic
CMOS analog switch designed for high performance
switching of analog signals. Combining low power, high
speed, low on-resistance and small physical size, the
DG2015 is ideal for portable and battery powered
applications requiring high performance and efficient use of
board space.
The DG2015 is built on Vishay Siliconix’s low voltage JI2
process. An epitaxial layer prevents latchup. Break-before-
make is guaranteed.
The switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FEATURES
Low Voltage Operation (2.7 V to 3.3 V)
Low On-Resistance - R
ON
: 0.85
3 dB Loss at 100 MHz
Fast Switching: t
ON
= 40 ns
t
OFF
= 35 ns
• QFN-16 Package
•
Material categorization: For definitions of
compliance please see
www.vishay.com/doc?99912
•
•
•
•
BENEFITS
•
•
•
•
•
Reduced Power Consumption
High Accuracy
Reduced Board Space
Reduce Board Space
TTL/1.8 V Logic Compatible
APPLICATIONS
•
•
•
•
•
Cellular Phones
Speaker Headset Switching
Audio and Video Signal Routing
PCMCIA Cards
Battery Operated Systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2015
QFN-16 (4 x 4)
NC1 COM1 GND COM4
16
15
14
13
NO1
INA
NO2
NC2
1
2
3
4
12
11
10
9
NC4
TRUTH TABLE
NO4
INB
NO3
Logic
0
1
NC1, 2, 3 and 4
ON
OFF
NO1, 2, 3 and 4
OFF
ON
5
COM2
6
V+
7
8
COM3 NC3
Top View
ORDERING INFORMATION
Temp Range
- 40 °C to 85 °C
Package
16-pin QFN
(4 mm x 4 mm)
(Variation 1)
Part Number
DG2015DN-T1-E4
Document Number: 71971
S13-1282-Rev. D, 27-May-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2015
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Reference V+ to GND
IN, COM, NC, NO
a
Limit
- 0.3 to + 6
- 0.3 to (V+ + 0.3)
30
± 150
± 200
- 65 to 150
16-pin QFN (4 mm x 4 mm)
QFN-16
c
240
1880
Unit
V
Current (Any terminal except NO, NC or COM)
Continuous Current (NO, NC, or COM)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
Package Solder Reflow Conditions
d
Power Dissipation (Packages)
b
mA
°C
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 23.5 mW/°C above 70 °C.
d. Manual soldering with iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
SPECIFICATIONS
(V+ = 3 V)
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
IN
= 0.4 V or 2 V
e
Limits
- 40 °C to 85 °C
Temp.
a
Unit
b
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
R
ON
Flatness
R
ON
Match
Switch Off
Leakage Current
Channel-On
Leakage Current
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
N
O
, N
C
Off Capacitance
d
Channel-On Capacitance
d
Symbol
V
NO
, V
NC
V
COM
R
ON
R
ON
Flatness
R
ON
I
NO(off)
I
NC(off)
I
COM(off)
I
COM(on)
V
INH
V
INL
C
in
I
INL
or I
INH
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on
Min.
b
Typ.
c
Max.
Full
V+ = 2.7 V, V
COM
= 0.2 V/1.5 V, I
NO
, I
NC
= 100 mA
V+ = 2.7 V, V
COM
= 0 V to V+, I
NO
, I
NC
= 100 mA
Room
Full
Room
Room
V+ = 3.3 V
V
NO
, V
NC
= 1 V/3 V, V
COM
= 3 V/1 V
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 1 V/3 V
Room
Full
Room
Full
Room
Full
Full
Full
Full
V
IN
= 0 V or V+
Full
Room
Full
Room
Full
Full
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
R
L
= 50
,
C
L
= 5 pF, f = 1 MHz
Room
Room
Room
Room
V
IN
= 0 V or V+, f = 1 MHz
Room
Room
Room
0
0.85
0.16
0.15
-1
- 10
-1
- 10
-1
- 10
2
V+
1.6
1.7
V
1
10
1
10
1
10
nA
0.4
4
-1
40
35
1
3
7
- 67
- 70
63
67
200
196
1
65
67
60
62
V
pF
µA
V
NO
or V
NC
= 2 V, R
L
= 300
,
C
L
= 35 pF
ns
pC
dB
pF
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 71971
S13-1282-Rev. D, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2015
Vishay Siliconix
SPECIFICATIONS
(V+ = 3 V)
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
IN
= 0.4 V or 2 V
e
Limits
- 40 °C to 85 °C
Temp.
a
Min.
b
2.7
V
IN
= 0 V or V+
Full
Full
Typ.
c
Max.
b
3.3
1
3.3
V
µA
µW
Unit
Parameter
Power Supply
Power Supply Range
Power Supply Current
Power Consumption
Symbol
V+
I+
P
C
Notes:
a. Room = 25 °C, full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.5
T = 25 °C
I
S
= 100 mA
2.5
I
S
= 100 mA
2.0
2.0
R
ON
- On-Resistance (Ω)
R
ON
- On-Resistance (Ω)
V+ = 3 V
85 °C
1.5
25 °C
- 40 °C
1.5
V+ = 3.0 V,
1.0
1.0
0.5
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
COM
- Analog Voltage (V)
V
COM
- Analog Voltage (V)
R
ON
vs. V
COM
and Supply Voltage
100
V+ = 3 V
V
IN
= 0 V
I+ - Supply Current (A)
I+ - Supply Current (nA)
10
R
ON
vs. Analog Voltage and Temperature
10 mA
1 mA
100 µA
10 µA
1 µA
V+ = 3 V
1
100 nA
10 nA
1 nA
0.1
- 60
100 pA
- 40
- 20
0
20
40
60
80
100
10
100
1K
10 K
100 K
1M
10 M
Temperature (°C)
Input Switching Frequency (Hz)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
Document Number: 71971
S13-1282-Rev. D, 27-May-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2015
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
V+ = 3 V
800
600
Leakage Current (pA)
V+ = 3 V
I
COM(off)
I
COM(on)
Leakage Current (pA)
400
200
0
- 200
- 400
- 600
100
I
COM(on)
I
COM(off)
10
I
NO(off)
, II
NC(off)
I
NO(off)
, II
NC(off)
1
- 60
- 40
- 20
0
20
40
60
80
100
- 800
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Temperature (°C)
V
COM
, V
NO
, V
NC
- Analog Voltage (V)
Leakage Current vs. Temperature
60
Leakage vs. Analog Voltage
10
t
ON
/ t
OFF
- Switching Time (μs)
- 10
Loss, OIRR, X
TALK
(dB)
50
LOSS
- 30
40
t
ON
V+ = 3 V
- 50
OIRR
- 70
X
TA LK
V+ = 3 V
R
L
= 50
Ω
30
t
OFF
V+ = 3 V
20
- 60
- 40
- 20
0
20
40
60
80
100
- 90
100 K
1M
10 M
Frequency (Hz)
100 M
1G
Temperature (°C)
Switching Time vs. Temperature
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
30
3.0
- Switching Threshold (V)
2.5
Q - Charge Injection (pC)
25
2.0
20
1.5
15
V+ = 3 V
1.0
10
V
T
0.5
5
0.0
0
1
2
3
4
5
V+ - Supply Voltage (V)
6
7
0
0
1
2
3
4
V
COM
- Analog Voltage (V)
5
6
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 71971
S13-1282-Rev. D, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2015
Vishay Siliconix
TEST CIRCUITS
V+
Logic
Input
V+
Switch
Input
NO or NC
IN
Logic
Input
GND
0V
C
L
(includes fixture and stray capacitance)
V
OUT
= V
COM
R
L
R
L
+ R
ON
R
L
300
Ω
C
L
35 pF
COM
Switch Output
V
OUT
V
INH
50 %
V
INL
t
r
< 5 ns
t
f
< 5 ns
0.9 x V
OUT
Switch
Output
0V
t
ON
t
OFF
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
Figure 1. Switching Time
V+
Logic
Input
COM
V
O
R
L
300
Ω
C
L
35 pF
V
INH
V
INL
t
r
< 5 ns
t
f
< 5 ns
V+
V
NO
V
NC
NO
NC
IN
GND
V
NC
= V
NO
V
O
Switch
0V
Output
90 %
t
D
t
D
C
L
(includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
R
gen
+
V
gen
V
IN
= 0 – V+
V+
COM
IN
GND
NC or NO
V
OUT
V
OUT
IN
C
L
= 1 nF
On
ΔV
OUT
Off
Q =
ΔV
OUT
x C
L
On
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
Document Number: 71971
S13-1282-Rev. D, 27-May-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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