技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD1400R12IP4D
PrimePACK™3模块采用第四代沟½栅/场终止IGBT4和增大的第四代发射极控制二极管
PrimePACK™3modulewithTrench/FieldstopIGBT4,enlargedEmitterControlled4diode
初步数据/PreliminaryData
V
CES
= 1200V
I
C nom
= 1400A / I
CRM
= 2800A
典型应用
•
斩波应用
电气特性
•
提高工½结温T
vjop
•
高直流电压稳定性
•
高短路½力，自限制短路电流
•
V
CEsat
带正温度系数
•
½V
CEsat
机械特性
•
4kV交流1分钟绝缘
•
封装的CTI>400
•
高爬电距离和电气间隙
•
高功率循环和温度循环½力
•
高功率密度
•
½热阻衬底
TypicalApplications
• ChopperApplications
ElectricalFeatures
• ExtendedOperationTemperatureT
vjop
• HighDCStability
•
High Short Circuit Capability, Self Limiting Short
CircuitCurrent
• V
CEsat
withpositiveTemperatureCoefficient
• LowV
CEsat
MechanicalFeatures
• 4kVAC1minInsulation
• PackagewithCTI>400
• HighCreepageandClearanceDistances
• HighPowerandThermalCyclingCapability
• HighPowerDensity
• SubstrateforLowThermalResistance
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2013-11-05
revision:2.3
1
ULapproved(E83335)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
preparedby:AC
approvedby:MS
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD1400R12IP4D
初步数据
PreliminaryData
IGBT,斩波器/IGBT-Chopper
集电极－发射极电压
Collector-emittervoltage
连续集电极直流电流
ContinuousDCcollectorcurrent
集电极重复峰值电流
Repetitivepeakcollectorcurrent
总功率损耗
Totalpowerdissipation
栅极－发射极峰值电压
Gate-emitterpeakvoltage
最大额定值/MaximumRatedValues
T
vj
= 25°C
T
C
= 100°C, T
vj max
= 175°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 175°C
V
CES
1200
1400
2800
7,70
+/-20
min.
I
C
= 1400 A, V
GE
= 15 V
I
C
= 1400 A, V
GE
= 15 V
I
C
= 1400 A, V
GE
= 15 V
I
C
= 49,0 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 1400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,0
Ω
I
C
= 1400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,0
Ω
I
C
= 1400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,0
Ω
I
C
= 1400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,0
Ω
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
t
d on
5,0
typ.
1,75
2,05
2,15
5,8
9,60
0,8
82,0
4,60
0,20
0,21
0,21
0,12
0,13
0,13
0,87
0,95
0,97
0,20
0,23
0,23
65,0
80,0
95,0
180
250
280
5600
9,30
150
max.
2,10
V
V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A
V
A
A
kW
V
I
C nom
I
CRM
P
tot
V
GES
特征值/CharacteristicValues
集电极－发射极饱和电压
Collector-emittersaturationvoltage
栅极阈值电压
Gatethresholdvoltage
栅极电荷
Gatecharge
内部栅极电阻
Internalgateresistor
输入电容
Inputcapacitance
反向传输电容
Reversetransfercapacitance
集电极-发射极截止电流
Collector-emittercut-offcurrent
栅极-发射极漏电流
Gate-emitterleakagecurrent
开通延迟时间(电感负½½)
Turn-ondelaytime,inductiveload
上升时间(电感负½½)
Risetime,inductiveload
关断延迟时间(电感负½½)
Turn-offdelaytime,inductiveload
下降时间(电感负½½)
Falltime,inductiveload
开通损耗½量(每脉冲)
Turn-onenergylossperpulse
关断损耗½量(每脉冲）
Turn-offenergylossperpulse
短路数据
SCdata
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
preparedby:AC
approvedby:MS
6,5
5,0
400
t
r
t
d off
t
f
I
C
= 1400 A, V
CE
= 600 V, L
S
= 30 nH
T
vj
= 25°C
V
GE
= ±15 V, di/dt = 8600 A/µs (T
vj
= 150°C) T
vj
= 125°C
R
Gon
= 1,0
Ω
T
vj
= 150°C
I
C
= 1400 A, V
CE
= 600 V, L
S
= 30 nH
T
vj
= 25°C
V
GE
= ±15 V, du/dt = 2700 V/µs (T
vj
= 150°C) T
vj
= 125°C
R
Goff
= 1,0
Ω
T
vj
= 150°C
V
GE
≤
15 V, V
CC
= 800 V
V
CEmax
= V
CES
-L
sCE
·di/dt
每个IGBT/perIGBT
每个IGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
dateofpublication:2013-11-05
revision:2.3
2
t
P
≤
10 µs, T
vj
= 150°C
E
on
E
off
I
SC
R
thJC
R
thCH
T
vj op
-40
19,5 K/kW
K/kW
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD1400R12IP4D
初步数据
PreliminaryData
Diode-斩波器/Diode-Chopper
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
最大额定值/MaximumRatedValues
T
vj
= 25°C
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
R
= 0 V, t
P
= 10 ms, T
vj
= 150°C
V
RRM
I
F
I
FRM
I²t
min.
I
F
= 1400 A, V
GE
= 0 V
I
F
= 1400 A, V
GE
= 0 V
I
F
= 1400 A, V
GE
= 0 V
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
F
1200
1400
2800
270
260
typ.
1,65
1,55
1,55
1000
1200
1250
170
300
330
80,0
140
160
17,0
150
max.
2,15
V
V
V
A
A
A
µC
µC
µC
mJ
mJ
mJ
V
A
A
kA²s
kA²s
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗（每脉冲）
Reverserecoveryenergy
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
I
F
= 1400 A, - di
F
/dt = 8600 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 600 V
T
vj
= 125°C
T
vj
= 150°C
I
F
= 1400 A, - di
F
/dt = 8600 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 600 V
T
vj
= 125°C
T
vj
= 150°C
I
F
= 1400 A, - di
F
/dt = 8600 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 600 V
T
vj
= 125°C
T
vj
= 150°C
每个二极管/perdiode
每个二极管/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
I
RM
Q
r
E
rec
R
thJC
R
thCH
T
vj op
-40
25,0 K/kW
K/kW
°C
反向二极管/Diode,Reverse
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
最大额定值/MaximumRatedValues
T
vj
= 25°C
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
RRM
I
F
I
FRM
I²t
min.
I
F
= 180 A, V
GE
= 0 V
I
F
= 180 A, V
GE
= 0 V
每个二极管/perdiode
每个二极管/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
T
vj
= 25°C
T
vj
= 125°C
V
F
R
thJC
R
thCH
T
vj op
-40
1200
180
360
0,23
typ.
1,65
1,65
120
150
max.
2,15
V
V
V
A
A
kA²s
特征值/CharacteristicValues
正向电压
Forwardvoltage
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
225 K/kW
K/kW
°C
preparedby:AC
approvedby:MS
dateofpublication:2013-11-05
revision:2.3
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD1400R12IP4D
初步数据
PreliminaryData
min.
T
C
= 25°C
T
C
= 100°C, R
100
= 493
Ω
T
C
= 25°C
R
2
= R
25
exp [B
25/50
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/80
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/100
(1/T
2
- 1/(298,15 K))]
R
25
∆R/R
P
25
B
25/50
B
25/80
B
25/100
-5
typ.
5,00
3375
3411
3433
max.
5
20,0
kΩ
%
mW
K
K
K
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
R100偏差
DeviationofR100
耗散功率
Powerdissipation
B-值
B-value
B-值
B-value
B-值
B-value
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
模块/Module
绝缘测试电压
Isolationtestvoltage
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
爬电距离
Creepagedistance
电气间隙
Clearance
相对电痕指数
Comperativetrackingindex
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
端子联接扭距
Terminalconnectiontorque
RMS, f = 50 Hz, t = 1 min.
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
V
ISOL
CTI
min.
T
C
=25°C,每个开关/perswitch
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
L
sCE
R
CC'+EE'
T
stg
M
-40
3,00
1,8
M
8,0
G
-
1200
10
Nm
g
4,0
Cu
Al
2
O
3
33,0
33,0
19,0
19,0
> 400
typ.
10
0,20
-
-
max.
150
6,00
2,1
nH
mΩ
°C
Nm
Nm
kV
mm
mm
重量
Weight
preparedby:AC
approvedby:MS
dateofpublication:2013-11-05
revision:2.3
4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD1400R12IP4D
初步数据
PreliminaryData
输出特性IGBT,斩波器（典型)
outputcharacteristicIGBT-Chopper(typical)
I
C
=f(V
CE
)
T
vj
=150°C
2800
输出特性IGBT,斩波器（典型)
outputcharacteristicIGBT-Chopper(typical)
I
C
=f(V
CE
)
V
GE
=15V
2800
2600
2400
2200
2000
1800
1600
I
C
[A]
1400
1200
1000
800
600
400
200
0
0,0
0,5
1,0
1,5
2,0
V
CE
[V]
2,5
3,0
3,5
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
2600
2400
2200
2000
1800
1600
I
C
[A]
1400
1200
1000
800
600
400
200
0
0,0
0,5
V
GE
= 19V
V
GE
= 17V
V
GE
= 15V
V
GE
= 13V
V
GE
= 11V
V
GE
= 9V
1,0
1,5
2,0
2,5 3,0
V
CE
[V]
3,5
4,0
4,5
5,0
传输特性IGBT,斩波器(典型)
transfercharacteristicIGBT-Chopper(typical)
I
C
=f(V
GE
)
V
CE
=20V
1800
1620
1440
1260
1080
900
720
540
360
180
0
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
开关损耗IGBT,斩波器（典型)
switchinglossesIGBT-Chopper(typical)
E
on
=f(I
C
),E
off
=f(I
C
)
V
GE
=±15V,R
Gon
=1Ω,R
Goff
=1Ω,V
CE
=600V
600
E
on
, T
vj
= 125°C
E
on
, T
vj
= 150°C
E
off
, T
vj
= 125°C
E
off
, T
vj
= 150°C
400
E [mJ]
200
5
6
7
8
9
V
GE
[V]
10
11
12
0
I
C
[A]
0
400
800
1200 1600
I
C
[A]
2000
2400
2800
preparedby:AC
approvedby:MS
dateofpublication:2013-11-05
revision:2.3
5
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