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BLF8G22LS-220U

Description
RF MOSFET Transistors BLF8G22LS-220/LDMOST/STANDARD
Categorysemiconductor    Discrete semiconductor   
File Size929KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF MOSFET Transistors BLF8G22LS-220/LDMOST/STANDARD

BLF8G22LS-220U Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
TechnologySi
PackagingTube
TypeRF Power MOSFET
NumOfPackaging1
Factory Pack Quantity60
BLF8G22LS-220
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
220 W LDMOS power transistor for base station applications at frequencies from
2110 MHz to 2170 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
I
Dq
(mA)
1620
V
DS
(V)
28
P
L(AV)
(W)
55
G
p
(dB)
17
D
(%)
33
ACPR
(dBc)
30
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2110 MHz to 2170 MHz frequency range
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